PEALD Multilayer Sealing Structure for Flexible OLED Barriers

The patent employs thin film structures with thickness of several hundred nanometers instead of rigid glass or thick micrometer-scale layers. The sealing structure uses alternating layers of silicon nitride and silicon oxide deposited by PECVD, creating a flexible yet effective barrier against moisture and oxygen while maintaining the flexibility needed for OLED applications.

The patent uses a composite multilayer structure consisting of alternating silicon nitride (SiN) and silicon oxide (SiO) layers. This composite approach combines the low water vapor transmission rate of silicon nitride with the low oxygen permeability of silicon oxide, achieving superior sealing performance while maintaining thin thickness and flexibility.

The patent employs a composite multilayer structure of silicon nitride and silicon oxide layers. Each layer type contributes its specific barrier property: silicon nitride provides low water vapor transmission rate while silicon oxide provides low oxygen permeability. The alternating layered structure achieves superior combined barrier performance at thin thickness levels, maintaining flexibility while preventing moisture and oxygen penetration.

Instead of relying on single-layer thickness for barrier performance, the patent transitions to a multilayer dimensional structure. The alternating layers of different materials create multiple barrier interfaces, where each interface contributes to the overall barrier property. This dimensional approach allows thin total thickness while maintaining effective moisture and oxygen blocking through the stacked layered architecture.