PEALD Substrate Rotation for Uniform Deep Trench Oxide Deposition
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Solution Overview
Problem
Three-dimensional semiconductor processes face challenges in maintaining electrical and mechanical properties due to increased complexity, affecting the quality and stability of semiconductor devices, particularly in achieving uniform film deposition in deep trenches.
Innovation Solution
A plasma-enhanced atomic layer deposition method and apparatus with a three-dimensional rotation device to uniformly deposit oxide layers, high resistance, and low resistance layers on stacked structures, improving film uniformity and stability by rotating the substrate during deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If three-dimensional stacking techniques are used to increase functional density, then the area utilization of semiconductor wafers is improved, but the complexity of processing increases and film deposition uniformity deteriorates
Solution Approach 1:
The patent applies the dynamics principle by rotating the substrate during the atomic layer deposition process. The substrate rotation mechanism dynamically adjusts the position of different regions of the substrate relative to the deposition source, ensuring that all areas including deep trenches receive uniform film deposition. This dynamic movement resolves the contradiction between processing three-dimensional stacked structures and maintaining film uniformity.
2Productivity
If three-dimensional stacking techniques are employed to increase component density, then production efficiency is improved, but process quality stability deteriorates
Solution Approach 1:
The substrate rotation mechanism provides dynamic control over the deposition process, ensuring consistent film quality across all stacked structures. By continuously moving the substrate during deposition, the system maintains process quality stability even when processing complex three-dimensional architectures, thus supporting high productivity without sacrificing reliability.
3Reliability
If deep trench structures are formed in stacked structures, then electrical properties are improved, but film deposition uniformity deteriorates
Solution Approach 1:
The patent specifically addresses deep trench film deposition by rotating the substrate during atomic layer deposition. The rotation ensures that plasma and precursor gases uniformly reach all surfaces including the bottom and sidewalls of deep trenches. This dynamic approach enables uniform film deposition in deep trench structures, maintaining both electrical properties and manufacturing precision.
4Manufacturing precision
If plasma-enhanced atomic layer deposition with substrate rotation is used, then film deposition uniformity is improved, but device complexity increases
Solution Approach 1:
The patent introduces a substrate rotation mechanism in the plasma-enhanced atomic layer deposition apparatus. While this adds some complexity to the device, it dramatically improves film deposition uniformity across three-dimensional stacked structures. The rotation mechanism is a relatively simple mechanical addition that enables uniform deposition in deep trenches and complex geometries, making the increased complexity worthwhile for achieving the desired manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly enhances the quality and stability of semiconductor devices by ensuring uniform film deposition, particularly in deep trenches, thereby improving the overall performance and yield of semiconductor devices.
Implementation Method 1
A second oxide layer is deposited on the stacked structures and the at least one trench by a plasma-enhanced atomic layer deposition (PEALD) apparatus, wherein the plasma-enhanced atomic layer deposition apparatus comprises a chamber, an upper electrode is arranged at a top of the chamber and connected to a first radio-frequency power device for generating a plasma
Data Source
AI summary
A method for fabricating a semiconductor device by using a plasma-enhanced atomic layer deposition apparatus. A substrate comprising a silicon substrate and a first oxide layer is provided. A plurality of stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form trenches. A second oxide layer is deposited by using a plasma-enhanced atomic layer deposition apparatus that includes a chamber, an upper electrode, a lower electrode, and a three-dimensional rotation device. The upper electrode is connected to a first radio-frequency power device. The upper electrode is configured to generate a plasma. The lower electrode is connected to a second radio-frequency power device. The three-dimensional rotation device drives the substrate to rotate. A high resistance layer is deposited on the second oxide layer. A low resistance layer is deposited on the high resistance layer.