PE-ALD Substrate Processing Apparatus Gas Mixing Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semi-batch type film forming apparatus for plasma enhanced atomic layer deposition (PE-ALD) method requires independent control of gases for reaction and modifying processes, leading to higher costs and deterioration of processing uniformity and film quality due to gas mixing between regions.
Innovation Solution
A substrate processing apparatus with a process chamber having distinct regions for precursor gas adsorption, reaction gas plasma generation, and modifying gas plasma generation, where the substrate rotates to sequentially pass through these regions, allowing for controlled supply and plasma generation of different gases to improve film quality and reduce costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a modifying process region is independently provided within the process chamber, then film quality is improved, but device complexity and cost increase
Solution Approach 1:
The patent merges the reaction process region and modifying process region into a single integrated region within the process chamber. The substrate sequentially passes through the precursor gas supply region, then the same region is used for both reaction gas plasma treatment and modifying gas plasma treatment by controlling gas supply timing, eliminating the need for separate regions and reducing apparatus complexity while maintaining film quality improvement capabilities
Solution Approach 2:
The single process region is designed to perform multiple functions: it serves as both the reaction process region for forming the film and the modifying process region for improving film quality. By controlling the timing of gas supply and substrate rotation, the same physical space accommodates different plasma treatment processes, making the apparatus more versatile and cost-effective
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances film quality and processing uniformity by isolating gas regions and optimizing gas supply timing, reducing the risk of gas mixing and improving the efficiency of the PE-ALD process.
Implementation Method 1
a substrate is exposed to a precursor gas, whereby the precursor gas which contains a constituent element of a thin film to be formed is chemisorbed onto the substrate
Implementation Method 2
the substrate is exposed to plasma of a reaction gas which contains a constituent element of a film to be formed, consequently forming a desired thin film on the substrate
Implementation Method 3
a modifying process performed using plasma of a modifying gas such as hydrogen or the like is added after the adsorption process performed using the precursor gas or after the reaction process performed using the plasma of the reaction gas
Data Source
AI summary
A substrate processing apparatus includes: a mounting stand provided with a substrate mounting region in which a workpiece substrate is mounted; a process vessel for defining a process chamber including a first region and a second region through which the substrate mounting region passes in order; a precursor gas supply unit for supplying a precursor gas to the first region; a process gas supply unit for supplying a first gas or a second gas differing from the first gas to the second region; at least one plasma generating unit for generating plasma of the first gas or the second gas in the second region; and a control unit for executing a repetition control of repeating a first operation for supplying the first gas to the second region for a first time and a second operation for supplying the second gas to the second region for a second time.