PECVD for Complex Substrates With Interstitial Site Deposition
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Solution Overview
Problem
Conventional plasma-enhanced chemical vapor deposition (PECVD) processes struggle to deposit ions within the volume of structurally complex substrates, particularly those with interstitial sites greater than a few microns, due to the absence of an electric field within their volume, limiting their application to only outer surfaces.
Innovation Solution
The method involves plasma-doping the substrate prior to PECVD by exposing it to ionizing radiation, such as alpha, beta, or gamma particles, or photons, to introduce a charged ion deposition state within the substrate's volume, enabling ion deposition at interstitial sites.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional PECVD processes are used, then deposition on outer surfaces is achieved, but ion deposition within the volume of structurally complex substrates is not possible
Solution Approach 1:
The substrate is pre-doped with plasma ions before the PECVD process, creating a charged ion deposition state within the substrate volume. This preliminary action enables subsequent ion deposition throughout the substrate's interior, not just on outer surfaces.
Solution Approach 2:
The invention changes the ionization state parameter of the substrate from charge-neutral to charged by introducing plasma doping. This parameter change creates a non-zero electric field within the substrate volume, enabling ion deposition in previously inaccessible regions.
2Force
If the substrate remains in a charge-neutral ion deposition state, then conventional PECVD can be used, but electric field within substrate volume is absent
Solution Approach 1:
Plasma doping is performed as a preliminary step before PECVD, introducing charged particles into the substrate to create the necessary electric field. This pre-preparation enables the subsequent deposition process to occur throughout the substrate volume.
Solution Approach 2:
Plasma acts as an intermediary substance that mediates between the external environment and the substrate interior. The plasma introduces charged particles that penetrate the substrate and create the electric field necessary for volumetric ion deposition.
3Manufacturing precision
If plasma doping is applied to generate charged ion deposition state, then ion deposition at interstitial sites is enabled, but additional process steps are required
Solution Approach 1:
The substrate undergoes plasma doping as a preliminary treatment to establish charged regions at interstitial sites. This pre-conditioning enables precise ion deposition at specific locations within the substrate volume during the subsequent PECVD process.
Solution Approach 2:
Plasma doping creates localized charged regions at interstitial sites within the substrate, giving different parts of the substrate different electrical properties. This local quality variation enables precise control over where ion deposition occurs within the substrate volume.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for ion deposition within the volume of structurally complex substrates, enhancing their applicability in energy converters and plasma cells by increasing current density and power production.
Implementation Method 1
doping the substrate with plasma to generate a charged ion deposition state for the substrate. The charged ion deposition state has a non-zero electric field within a volume of the thickness
Implementation Method 2
In some instances, doping the substrate with plasma may include exposing the substrate to nuclear radiation. In some configurations, in the charged deposition state, the substrate is in a state of radioactive decay
Implementation Method 3
depositing ions on the substrate doped with plasma at one or more interstitial sites within the volume of the thickness. depositing ions on the substrate doped with plasma occurs within a plasma-enhanced chemical deposition reactor
Implementation Method 4
Chemical vapor deposition (CVD) is often used in the fabrication of micro- and nano-technology. During a CVD manufacturing process, a chemical reaction produces a desired species that is deposited on a substrate
Implementation Method 5
applying a voltage to a radio-frequency electrode for a predetermined period of time. The predetermined period of time may correspond to the deposition rate of ions at the one or more interstitial sites within the volume of the substrate
Data Source
AI summary
A substrate includes a first outer surface, a second outer surface opposite the first outer surface, and a region having a volume extending from the first outer surface to the second outer surface. At least a portion of the volume of this region defines a cavity of an interstitial site where the interstitial site is defined by a wall having a surface and the surface includes a plasma-formed deposition layer.