PECVD Cyclic Siloxane Polymer Retention

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Solution Overview

Problem

Existing methods for plasma-enhanced chemical vapor deposition of polymers comprising cyclic siloxanes result in significant cleavage of cyclic siloxane rings, leading to undesirable properties for commercial applications, particularly in coating technologies where retention of cyclic siloxane groups is crucial for protective and dielectric properties.

Innovation Solution

A method involving plasma-enhanced chemical vapor deposition (PECVD) with controlled plasma power density and precursor gas composition, using monomers with cyclic siloxane and vinyl groups, to retain a high percentage of cyclic siloxane rings in the polymer, thereby forming polymers with superior protective, dielectric, and mechanical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If plasma-enhanced chemical vapor deposition (PECVD) is used to polymerize monomers comprising cyclic siloxane groups, then polymer deposition is achieved, but significant cleavage of cyclic siloxane rings occurs resulting in loss of desirable properties

Engineering Contradiction:
Improveretention of cyclic siloxane groupsVSAvoiddesirable properties for commercial applications
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies parameter changes by carefully controlling plasma process conditions including power density (0.1-100 mW/cm²), pressure (1-760 Torr), temperature (-50°C to 200°C), and monomer concentration to minimize cyclic siloxane ring cleavage while maintaining polymer deposition efficiency. These parameter optimizations resolve the contradiction between achieving deposition and preserving ring structure.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs periodic pulsed plasma deposition cycles alternating between plasma activation phases and deposition phases. This periodic action allows controlled polymerization while minimizing continuous plasma exposure that would cause ring cleavage, thereby maintaining cyclic siloxane integrity while achieving polymer coating.

Inventive Principle:
Principle #19Periodic action

2Manufacturing precision

If traditional solution phase polymerization techniques are used, then cyclic siloxane groups are retained at high percentages, but the method lacks the protective coating capabilities needed for commercial applications

Engineering Contradiction:
Improveretention of cyclic siloxane groupsVSAvoidcoating capability for commercial applications
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent replaces traditional solution-phase mechanical polymerization with plasma-enhanced vapor-phase polymerization. This substitution maintains high cyclic siloxane retention while providing superior coating capabilities through vapor deposition, enabling conformal coatings on complex substrates and eliminating solvent removal steps required in solution processing.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If hot filament vapor deposition techniques are used with free radical initiator, then cyclic siloxane groups are retained, but limitations exist in the types and shapes of substrates that may be coated

Engineering Contradiction:
Improveretention of cyclic siloxane groupsVSAvoidtypes and shapes of substrates that may be coated
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent replaces hot filament physical vapor deposition with plasma-enhanced chemical vapor deposition. This substitution eliminates the need for high-temperature filaments and enables coating of temperature-sensitive and complex-shaped substrates through controlled plasma chemistry, thereby expanding substrate versatility while maintaining cyclic siloxane retention.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent utilizes controlled plasma parameters including lower operating temperatures, adjustable power density, and optimized pressure conditions to enable coating of diverse substrate types and shapes that cannot withstand hot filament conditions, thus resolving the contradiction between retention and adaptability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively retains a significant percentage of cyclic siloxane groups in the polymer, resulting in coatings with enhanced protective properties, reduced defects, and improved mechanical stability, suitable for various commercial applications including electronic components and medical devices.

Implementation Method 1

Methods for plasma depositing polymers comprising cyclic siloxanes... plasma-enhanced chemical vapor deposition (PECVD)... depositing a polymer formed from at least one monomer on at least a portion of the substrate

Methodology Applied
Scientific EffectPlasma-enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Implementation Method 2

chemical vapor deposition techniques... polymerizing monomers comprising cyclic siloxane groups... polymer formed from at least one monomer

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS11393679B2Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
Publication Date: 2022.07.19 GVD CORP
  • US11393679B2 patent drawing
  • US11393679B2 patent drawing
  • US11393679B2 patent drawing

AI summary

Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate within a PECVD reactor, wherein the precursor gas comprises an initiator and at least one monomer comprising a cyclic siloxane and at least two vinyl groups, and depositing a polymer formed from the at least one monomer on the substrate.