PECVD Process Chamber Support Rods for Compact Electrode Integration
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Solution Overview
Problem
The existing plasma enhanced chemical vapor deposition (PECVD) devices with a cantilever structure have complex electrode structures and occupy a large space, making them unsuitable for large-capacity applications.
Innovation Solution
A semiconductor process device with a support mechanism and electrode mechanisms that include support rods and electrode assemblies, allowing for the wafer boats to be supported and electrodes to be introduced without the need for a cantilever paddle, simplifying the structure and reducing space occupation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a cantilever structure is used to support wafer boats and move electrodes, then the electrode introduction function is achieved, but the structure becomes complex and occupies large space
Solution Approach 1:
The electrode mechanism is divided into separate components: the support mechanism (independent of cantilever) and the electrode introduction mechanism (separate from wafer boat manipulation). This segmentation allows each component to perform its specific function without the complexity of integrated cantilever movement, resolving the contradiction between operational capability and structural simplicity.
Solution Approach 2:
The electrode introduction function is extracted from the cantilever paddle structure. Instead of the electrode mechanism being integrated into the moving cantilever assembly, it is separated and positioned independently, eliminating the complexity of synchronized movement while maintaining the electrode introduction capability.
2Ease of operation
If a cantilever structure is used to support wafer boats, then wafer loading is achieved, but the device occupies large space and is unsuitable for large-capacity applications
Solution Approach 1:
Instead of using a cantilever structure that extends into the process chamber to support wafer boats, the invention inverts the approach by using fixed support rods that extend from the flanges into the chamber. This inversion eliminates the need for large-scale moving structures while maintaining wafer loading functionality, thereby reducing device volume.
3Ease of operation
If the front electrode mechanism moves with the front furnace door and cantilever paddle, then electrode introduction is achieved, but the mechanism becomes complex and occupies large space
Solution Approach 1:
The electrode introduction mechanism is extracted from the moving assembly of the front furnace door and cantilever paddle. The electrode mechanism is positioned independently on the support rods, allowing it to remain stationary or move minimally while the furnace door and cantilever perform their respective functions, thereby reducing the space occupied by the electrode mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design simplifies the electrode mechanism, reduces space occupation, and avoids the disadvantages of the cantilever structure, enhancing the performance and efficiency of the semiconductor process device.
Implementation Method 1
The support mechanism includes two support rods, a first end of each support rod is connected to the front flange, a second end of each support rod is connected to the rear flange, and the two support rods are used to carry a first wafer boat and a second wafer boat
Implementation Method 2
The first electrode mechanism includes two first electrode mechanisms which are respectively sleeved on the first ends of the two support rods, the two first electrode mechanisms have opposite polarities and are used to carry a front end of the first wafer boat when the first wafer boat is loaded on the support rods and are respectively electrically connected to two terminals at the front end of the first wafer boat to introduce electrodes into the first wafer boat
Implementation Method 3
a low-voltage radio frequency glow discharge is used at a certain temperature to make the process gas react chemically to form a layer of SixNy film on the surface of the silicon wafer
Implementation Method 4
a proper amount of process gas is introduced into a high vacuum process tube, and an electrode is introduced into a graphite boat in the process tube. The silicon wafer is placed on two discharging poles of the graphite boat, and a low-voltage radio frequency glow discharge is used at a certain temperature to make the process gas react chemically to form a layer of SixNy film on the surface of the silicon wafer
Data Source
AI summary
A process chamber includes: a furnace tube; a front flange; a rear flange; a support mechanism; a first electrode mechanism; and a second electrode mechanism. The front flange and the rear flange are respectively arranged at a furnace mouth and a furnace tail of the furnace tube. The support mechanism is arranged in the furnace tube and includes two support rods, a first end of each support rod is connected to the front flange, a second end of each support rod is connected to the rear flange, and the two support rods are used to carry a first wafer boat and a second wafer boat. The first electrode mechanism includes two first electrode mechanisms which are respectively sleeved on the first ends of the two support rods, the two first electrode mechanisms have opposite polarities and are used to carry a front end of the first wafer boat.