High Temperature Substrate Pedestal Module with Ceramic Stem
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Solution Overview
Problem
Current semiconductor substrate processing apparatuses face challenges in efficiently processing high-temperature semiconductor substrates due to limitations in maintaining high temperatures and achieving effective gas sealing during plasma-enhanced chemical vapor deposition processes.
Innovation Solution
The apparatus incorporates a high-temperature substrate pedestal module with a ceramic platen and stem, along with an adapter that forms vacuum seals using O-rings, allowing for efficient gas distribution and thermal isolation to support high-temperature processing while minimizing the mounting area and maintaining a vacuum environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a traditional substrate pedestal module with large mounting area is used, then the structural stability is improved, but the thermal transfer increases and processing efficiency decreases
Solution Approach 1:
The substrate pedestal module is segmented into distinct functional components: a platen for substrate support, a stem for structural connection, and an adapter for mounting. This segmentation allows optimization of each component's thermal properties, particularly minimizing the mounting area at the adapter-stem interface to reduce thermal transfer to the vacuum chamber walls while maintaining structural stability.
Solution Approach 2:
The design applies local quality by creating a minimized mounting area specifically at the adapter-stem interface, while the platen maintains a larger surface area for effective substrate heating. This localized optimization reduces thermal transfer at the critical mounting point without compromising the overall heating capability of the platen.
2Reliability
If gas sealing is achieved using traditional methods, then the vacuum seal reliability is improved, but the device complexity increases
Solution Approach 1:
The patent employs flexible O-rings as sealing elements within grooves at the adapter-stem interface. These flexible rubber or elastomeric O-rings conform to the mating surfaces, creating reliable vacuum seals without requiring complex mechanical sealing structures, thereby simplifying the overall device design while maintaining seal integrity.
Solution Approach 2:
The adapter acts as an intermediary component between the stem and the vacuum chamber flange. It incorporates O-ring grooves that provide sealing functionality, mediating the connection between the heated platen assembly and the vacuum environment without direct metal-to-metal contact that would compromise sealing reliability.
3Manufacturing precision
If gas distribution channels are extended to reach the substrate backside, then the processing uniformity is improved, but the device complexity increases
Solution Approach 1:
The gas distribution system merges multiple functions into the stem component: it serves as both the structural support element connecting the platen to the adapter and the gas distribution conduit. Gas passages are integrated within the stem to deliver process gas to the substrate backside, eliminating the need for separate gas delivery mechanisms and simplifying the overall device architecture.
Solution Approach 2:
The stem is designed as a multi-functional component that simultaneously provides mechanical support, thermal management, and gas distribution functions. This universal design approach allows a single component to achieve deposition uniformity through integrated gas passages while avoiding the complexity of multiple separate systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables reliable high-temperature processing of semiconductor substrates by maintaining effective vacuum seals and efficient gas supply, enhancing the deposition processes and reducing thermal transfer, thus improving the processing efficiency and substrate quality.
Implementation Method 1
The inner groove has an inner O-ring therein so as to form an inner vacuum seal between the cylindrical interior region of the adapter and the at least one gas outlet during processing. The outer groove has an outer O-ring therein so as to form an outer vacuum seal between a region surrounding the side wall of the adapter and the at least one gas outlet during processing.
Implementation Method 2
a stem of ceramic material having a side wall defining a cylindrical interior region thereof, a lower surface, and an upper end that supports the platen
Data Source
AI summary
A semiconductor substrate processing apparatus comprises a vacuum chamber in which a semiconductor substrate may be processed, a showerhead module through which process gas from a process gas source is supplied to a processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen, a stem having a side wall defining a cylindrical interior region thereof, a lower surface, and an upper end that supports the platen, and an adapter having a side wall defining a cylindrical interior region thereof and an upper surface that supports the stem. The lower surface of the stem includes a gas inlet in fluid communication with a respective gas passage located in the side wall of the stem and a gas outlet located in an annular gas channel in the upper surface of the adapter. The upper surface of the adapter includes an inner groove located radially inward of the gas outlet and an outer groove located radially outward of the inner groove. The inner groove and the outer groove have respective O-rings therein so as to form a vacuum seals during processing. The platen includes at least one platen gas passage in fluid communication with a respective gas passage in the side wall of the stem through which backside gas can be supplied to a region below a semiconductor substrate when supported on the upper surface of the platen during processing.