Peeling Layer Thickness Control for Flexible Device Fabrication
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Solution Overview
Problem
The peeling process in fabricating flexible devices, such as semiconductor and light-emitting devices, often results in high stress on functional elements, leading to breakage and reduced yield, along with issues like dust generation and impurity entry, and alignment accuracy challenges.
Innovation Solution
A peeling method involving a thin peeling layer (0.1 nm to 10 nm thick) with compressive stress is formed over a substrate, allowing for a peeling trigger to be created by separating parts of the peeling layer and the layer to be peeled, enabling efficient separation with minimal force and preventing cracking, while also using bonding layers for sealing and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional peeling methods (laser ablation or physical force) are used to separate the functional element layer from the formation substrate, then peeling can be achieved, but high stress is applied to the functional element causing breakage and reduced yield
Solution Approach 1:
A peeling layer is introduced as an intermediary between the formation substrate and the layer to be peeled. This peeling layer has a specific thickness range (greater than or equal to 0.1 nm and less than 10 nm) and is designed to provide a controlled peeling interface that reduces stress on the functional element during separation, thereby preventing breakage and improving peeling yield
Solution Approach 2:
The invention changes the parameter of the peeling layer thickness to a specific range (0.1 nm to 10 nm) and controls the stress state (compressive or tensile stress greater than or equal to 1 MPa in absolute value) to optimize the peeling process. By adjusting these parameters, the peeling can be performed with minimal stress on the functional element, resolving the contradiction between achieving peeling and maintaining element integrity
2Ease of manufacture
If high stress is applied during peeling to separate the layers, then peeling can be achieved, but dust is generated and impurities enter the functional element
Solution Approach 1:
The peeling layer serves as a mediator that enables easy peeling through its controlled thickness and stress properties, while simultaneously preventing dust generation and impurity entry by providing a clean, controlled separation interface that does not require high-stress mechanical force
Solution Approach 2:
The invention replaces high-stress mechanical peeling methods with a controlled separation process based on the peeling layer's inherent stress properties. The peeling is achieved through controlled separation at the peeling layer interface rather than through high-force mechanical means, thereby eliminating dust generation and impurity contamination
3Ease of operation
If manual or high-force peeling methods are used, then peeling can be performed, but alignment accuracy between substrates deteriorates
Solution Approach 1:
The peeling layer acts as an intermediary that enables easy peeling operations while maintaining substrate alignment. The controlled thickness and stress properties of the peeling layer allow for gentle, controlled separation that prevents substrate displacement and maintains alignment accuracy throughout the peeling process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the yield of the peeling process, reduces the risk of functional element damage, minimizes dust and impurity entry, and improves alignment accuracy, resulting in a more reliable and efficient fabrication of lightweight, thin, and flexible devices.
Implementation Method 1
a first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate, a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer, a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger
Data Source
AI summary
The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.