Penetrating Electrodes for SiP Image Sensor Interconnects

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Solution Overview

Problem

Existing semiconductor devices face challenges in electrically connecting image sensors located in the upper area of a System In a Package (SiP) semiconductor device with devices in the lower area, necessitating a method to facilitate signal exchange across different layers.

Innovation Solution

A semiconductor device and fabrication method involving a semiconductor substrate with a photodiode and transistor area, a Pre Metal Dielectric (PMD) layer, multiple metal layers, and penetrating electrodes that connect the image sensor to a second device beneath it, using techniques like chemical vapor deposition and physical vapor deposition to form electrodes and ensure electrical connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If an image sensor is integrated into the upper area of a SiP semiconductor device, then the image sensor can receive external light and generate electric signals, but it becomes necessary to create complex electrical connections to connect the image sensor with devices in the lower area

Engineering Contradiction:

Improveimage sensor integration capabilityVSAvoidelectrical connection structure

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent transitions from planar two-dimensional connections to three-dimensional vertical connections by implementing penetrating electrodes that extend through multiple layers (PMD layer and metal layers) to connect the image sensor in the upper area with devices in the lower area, enabling spatial separation while maintaining electrical connectivity

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces intermediate connecting structures including penetrating electrodes and connecting layers that act as mediators between the image sensor and lower area devices, facilitating signal transmission across different layers without direct contact between the image sensor and lower devices

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If penetrating electrodes are formed to connect through the PMD layer and metal layers, then electrical connectivity between upper and lower areas is achieved, but the manufacturing process becomes more complex

Engineering Contradiction:

Improveelectrical connectivityVSAvoidfabrication process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent performs preliminary actions by forming the PMD layer and metal layers with predetermined patterns and properties before forming the penetrating electrodes, ensuring that the electrode formation process can proceed efficiently with proper alignment and electrical connection characteristics

Inventive Principle:

Principle #10Preliminary action

3Adaptability or versatility

If multiple layers (PMD layer and metal layers) are formed on the semiconductor substrate, then device functionality is enhanced, but the vertical space required for connections increases

Engineering Contradiction:

Improvedevice functionalityVSAvoidvertical connection length

Core Design Contradiction:

Adaptability or versatilityVSLength of stationary object

Solution Approach 1:

The patent implements a nested structure where penetrating electrodes are embedded within and extend through multiple layers (PMD layer and metal layers) that are stacked vertically, allowing compact integration of multiple functional layers while maintaining connection pathways through the nested configuration

Inventive Principle:

Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables effective electrical connection between image sensors in the upper area and devices in the lower area of a SiP semiconductor device, allowing for efficient signal exchange and integration of image sensors within the SiP structure.

Implementation Method 1

A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

using techniques like chemical vapor deposition and physical vapor deposition to form electrodes

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 3

using techniques like chemical vapor deposition and physical vapor deposition to form electrodes

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS7880292B2Semiconductor device and fabricating method thereof

Publication Date: 2011.02.01 ADEIA SEMICON TECH LLC

AI summary

A semiconductor device that allows an image sensor (in an upper area of a SiP semiconductor device) to exchange signals with a device in a lower area of a SiP semiconductor device. A semiconductor device includes at least one of: A semiconductor substrate having a photodiode area and a transistor area. A PMD (Pre Metal Dielectric) layer formed on and/or over the semiconductor substrate. At least one metal layers formed on and/or over the PMD layer. A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode.