Penetrating Structures for Stacked Dies
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Solution Overview
Problem
Existing methods for interconnecting semiconductor dies in stacked packages are incomplete, prone to failure, and consume a significant thermal budget, limiting the life and thermal processing capabilities of the package.
Innovation Solution
The use of penetrating structures and recesses formed in semiconductor substrates, where the penetrating structures are designed to deform and engage with corresponding recesses, providing a robust mechanical and electrical connection, and utilizing conductive materials with low reflow temperatures to facilitate bonding at reduced temperatures and pressures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high temperature bonding is used to form bonds between neighboring dies, then strong electrical connection is achieved, but a significant portion of the total thermal budget is consumed
Solution Approach 1:
The compliant layer acts as a mediator that enables bonding at reduced temperatures by absorbing thermal stress and preventing direct heat transfer requirements. This intermediary allows the formation of reliable bonds without consuming the full thermal budget that would be required for traditional high-temperature die-to-die bonding
Solution Approach 2:
The bonding process parameters are changed by introducing the compliant layer, which modifies the thermal and mechanical conditions required for bonding. This allows bonding to occur at lower temperatures and reduced pressure, optimizing the thermal budget while maintaining bond strength
2Reliability
If traditional bonding processes are used to interconnect dies, then electrical connection is achieved, but the process limits the life of the package and thermal budget available for other processing steps
Solution Approach 1:
The compliant layer serves as a protective intermediary that extends package life by preventing stress concentration and connection failure. This layer continuously absorbs thermal and mechanical stresses during the package's operational life, protecting the electrical connection from degradation
Solution Approach 2:
The compliant layer provides beforehand cushioning by being pre-installed between the interconnect and bond pad to anticipate and absorb future thermal and mechanical stresses. This preventive measure protects the connection from stress-induced failure throughout the package's operational life
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more reliable and durable interconnection that reduces the thermal budget required for bonding, allowing for more compact and efficient semiconductor packages with improved thermal management.
Implementation Method 1
the penetrating structures are designed to deform and engage with corresponding recesses, providing a robust mechanical and electrical connection
Implementation Method 2
utilizing conductive materials with low reflow temperatures to facilitate bonding at reduced temperatures and pressures
Data Source
AI summary
Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods are disclosed. A system in accordance with a particular embodiment includes a first semiconductor substrate having a first substrate material, and a penetrating structure carried by the first semiconductor substrate. The system further includes a second semiconductor substrate having a second substrate material with a preformed recess. The penetrating structure of the first semiconductor substrate is received in the recess of the second semiconductor substrate and is mechanically engaged with the recess and secured to the second semiconductor substrate.