Penetration Electrode Comb Capacitors for Power Stability
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Solution Overview
Problem
Wide I/O semiconductor devices require numerous power compensation capacitors to stabilize power supply voltage, leading to increased chip area due to the need for multiple data input/output circuits operating simultaneously.
Innovation Solution
Incorporating power compensation capacitors within the penetration electrode forming areas, utilizing electrode patterns that form comb-shaped capacitors to stabilize power supply potentials without increasing chip area, and optimizing layouts to reduce inductance and parasitic resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If many power compensation capacitors are provided in the chips to stabilize power supply voltage, then power supply stability is improved, but chip area increases
Solution Approach 1:
The patent merges the power compensation capacitor structure with the penetration electrode structure by forming comb-shaped capacitors using the electrode patterns of the penetration electrodes themselves. The penetration electrodes are configured with interdigitated comb patterns where alternating fingers are connected to different potential lines, creating capacitor structures that serve dual purposes: electrical connection and power compensation.
Solution Approach 2:
The penetration electrodes are designed to perform multiple functions simultaneously: providing electrical connections between stacked chips and serving as power compensation capacitors. The comb-shaped electrode patterns create capacitance between adjacent fingers while maintaining the through-electrode connectivity function, making the same structural elements serve both connection and stabilization purposes.
2Reliability
If numerous power compensation capacitors are integrated into the chip, then power supply voltage stabilization is improved, but device complexity increases
Solution Approach 1:
The patent combines the capacitor formation process with the existing penetration electrode fabrication process. The same electrode patterns that create the through-electrodes also form the comb-shaped capacitor structures, eliminating the need for separate capacitor fabrication steps and reducing overall device complexity.
Solution Approach 2:
The penetration electrode structure automatically provides power compensation functionality through its own geometric configuration. The interdigitated comb pattern of the electrodes inherently creates capacitance without requiring additional components or complex circuitry, allowing the structure to serve its own stabilization needs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively stabilizes power supply voltage without expanding the chip area, enhancing the semiconductor device's performance and mechanical strength by integrating power compensation capacitors within the existing penetration electrode structure.
Implementation Method 1
a first capacitor formed in the third area
Data Source
AI summary
Disclosed herein is a device that includes: first and second memory cell arrays arranged in a first direction; a plurality of first bump electrodes disposed between the first and second memory cell arrays and arranged in line in a second direction crossing the first direction; a plurality of second bump electrodes disposed between the first bump electrodes and the second memory cell arrays and arranged in line in the second direction; a first area being between the first and second bump electrodes; a plurality of third bump electrodes disposed in the first area; and a first capacitor formed in the third area.