Semiconductor Penetration Electrode Crack Detection
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Solution Overview
Problem
Existing methods for detecting cracks in semiconductor devices, particularly in through-silicon-via array areas, are limited to the outer periphery and fail to detect cracks in central or other non-peripheral regions, posing a challenge for ensuring device reliability.
Innovation Solution
A semiconductor device design that includes a plurality of penetration electrodes and a wiring structure with specific configurations, such as first and second penetration electrodes and middle wirings, allowing for electrical paths between these electrodes to detect cracks by flowing current through the wiring structure, enabling crack detection in both peripheral and central areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a wire for detecting cracks is arranged along the entire outer periphery of a semiconductor chip, then cracks generated on an outer periphery part of a semiconductor chip can be detected, but cracks generated at portions other than an outer periphery part of a semiconductor chip cannot be detected
Solution Approach 1:
The detection wiring is divided into multiple segments: outer periphery detection wires arranged along the outer periphery, and inner area detection wires arranged in the interior region. Each segment independently detects cracks in its specific zone, thereby achieving comprehensive coverage from edge to center without requiring a single continuous wire structure
Solution Approach 2:
The detection wiring structure transitions from a one-dimensional outer periphery loop to a two-dimensional network that includes both peripheral and interior regions. By adding detection wires in the interior area (second direction) that are electrically connected through penetration electrodes (first direction), the detection coverage expands from the boundary into the bulk of the chip
2Productivity
If through silicon vias are arranged in an array manner in the central part of a semiconductor chip, then device functionality is enhanced, but cracks generated in the through-silicon-via array area cannot be detected by existing peripheral detection methods
Solution Approach 1:
Detection wires are pre-configured in the interior area to pass through or adjacent to the through silicon via array region before the chips are stacked. This preliminary arrangement ensures that when cracks occur in the TSV array area during or after stacking, the detection wires are already in position to detect them via resistance changes
Solution Approach 2:
Penetration electrodes serve as intermediaries that electrically connect detection wires in different chips stacked together. The detection wires from upper and lower chips are connected through penetration electrodes, creating continuous detection paths that pass through the TSV array area, enabling crack detection in regions that would otherwise be inaccessible
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for comprehensive crack detection in semiconductor devices, enhancing reliability by identifying cracks in through-silicon-via array areas beyond the outer periphery, thus preventing potential device failures.
Implementation Method 1
detecting a variation of a resistance value between the pads
Data Source
AI summary
Disclosed herein is a semiconductor chip that includes: a plurality of penetration electrodes each penetrating between main and back surfaces of the semiconductor chip, the penetration electrodes including a plurality of first penetration electrodes, a second penetration electrode and a third penetration electrode; and a wiring configured to intersect with a plurality of regions, each of the regions being defined as a region between corresponding two of the first penetration electrodes, one end of the wiring being coupled to the second penetration electrode, the other end of the wiring being coupled to the third penetration electrode.