Per-Row Memory Error Tracking for Post-Package Repair
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Solution Overview
Problem
Existing semiconductor memory devices lack comprehensive error correction mechanisms that provide transparent information on error locations and recommend timely post-package repairs, leading to potential safety issues in applications like automotive systems.
Innovation Solution
Implementing a system to store per-row error information, including baseline and recent error data, and using an ECS circuit to analyze this data to recommend post-package repairs when necessary, ensuring transparent error management and timely repairs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error correction circuits scan every memory cell periodically to repair errors, then error correction capability is improved, but device complexity and time consumption increase
Solution Approach 1:
The patent segments the memory array into rows and tracks error information at the row level rather than individually at the cell level. This segmentation allows the system to manage errors more efficiently by grouping related errors together, reducing the complexity of tracking and correcting individual cell errors while maintaining comprehensive error correction coverage.
Solution Approach 2:
The patent implements preliminary action by storing baseline error information for each row before operational use. This baseline data is established during manufacturing or initial testing and is used to compare against recent error counts, enabling the system to identify degradation trends proactively and trigger repairs before failures occur, thereby improving reliability without requiring continuous complex analysis during operation.
2Reliability
If comprehensive error tracking and repair recommendations are implemented, then reliability is improved, but loss of time for error analysis and repair decision-making
Solution Approach 1:
The patent implements feedback by continuously comparing recent error counts against baseline error information and predefined thresholds. When the recent error count exceeds the baseline by a significant margin, the system automatically generates repair recommendations. This feedback mechanism provides timely, objective guidance for repair decisions, reducing the time required for analysis while maintaining high reliability through data-driven repair timing.
3Measurement precision
If per-row error information storage and analysis is implemented, then measurement precision of error data is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by storing and analyzing error information at the row level rather than uniformly across the entire memory array. Each row maintains its own baseline error information and recent error count, allowing for precise, localized error tracking that identifies specific problematic rows. This approach provides high measurement precision for error data while managing complexity by processing information in manageable row-level units rather than requiring system-wide complex analysis.
Data Source
AI summary
Per-row recent and/or baseline error information for word lines may be stored along the word lines in some examples. In some examples, baseline error information may be stored in a fuse array. In some examples, the baseline error information may be loaded from the fuse array to a memory array. In some examples, based on the recent and/or baseline error information, the memory device may provide a post-package repair recommendation.