Perforated Base Element for Semiconductor Sintered Layer Stress Relief
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor arrangements face rapid aging due to thermal stresses, which cause cracking in the sintered layer, leading to reduced service life.
Innovation Solution
A method where the base element is perforated in regions adjacent to the sintered layer, allowing for adjusted rigidity and expansion behavior, thereby reducing stress on the sintered layer, and improving the semiconductor device's service life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the base element is made rigid to provide stable support for the semiconductor, then structural stability is improved, but thermal stress concentration increases leading to cracking in the sintered layer
Solution Approach 1:
The base element is designed with a porous structure containing multiple cavities in the region adjacent to the sintered layer. This porous configuration allows the base element to absorb thermal expansion stresses through controlled deformation into the cavities, preventing stress concentration that would otherwise cause cracking in the sintered layer while maintaining overall structural stability.
Solution Approach 2:
The rigidity of the base element is locally modified by introducing cavities, changing the mechanical parameters of the base element in the stress-prone region. This allows the base element to exhibit controlled flexibility under thermal stress while maintaining stability in non-stress regions, resolving the contradiction between rigidity and stress resistance.
2Temperature
If the sintered layer is made thicker to improve thermal contact, then heat dissipation is improved, but susceptibility to thermal stress cracking increases
Solution Approach 1:
The problematic thick sintered layer configuration is replaced by a different approach: the base element itself is modified with cavities to provide stress absorption capacity. This extracts the stress-absorption function from the sintered layer and relocates it to the base element structure, allowing the sintered layer to remain thin and stress-resistant while the base element handles thermal expansion through its porous design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly reduces thermal stress on the sintered layer, enhancing the service life of the semiconductor device by allowing elastic deformation of the base element during temperature changes.
Implementation Method 1
the semiconductor being attached to the base element by means of a sintered layer
Implementation Method 2
The base element can serve as a heat sink, via which heat generated on the semiconductor is dissipated to an area surrounding the semiconductor arrangement
Data Source
Figure 1
Figure 2
AI summary
The invention relates to a method for producing a semi-conductor arrangement (1), comprising at least one base element (2) and a semi-conductor (3), said semi-conductor (3) being secured to the base element (2) by means of a sintered layer (4). According to the invention, an area (9) of the base element (2), which is directly adjacent to the sintered layer (4), is perforated at least in parts. The invention further relates to a semi-conductor arrangement (1).