Perhydropolysilazane Composition for Defect-Free Siliceous Films
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the increased occurrence of defects in siliceous films, particularly in trench structures, which affects the yield rate of electronic devices due to the micronization of insulation structures, and existing methods for reducing defects in siliceous films are insufficient.
Innovation Solution
A perhydropolysilazane with a specific molecular weight range and structural characteristics, characterized by a low ratio of SiH 1,2 and NH groups, is used to form a siliceous film with a curing composition that has high stability against oxidation and minimal shrinkage, reducing defects and improving film uniformity within narrow trenches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of insulation structures is reduced through micronization, then device integration is improved, but defect occurrence in siliceous films increases
Solution Approach 1:
The patent changes the chemical parameters of the polysilazane composition by controlling the molecular weight distribution (weight-average molecular weight of 5,000 to 17,000) and the specific ratios of SiH 1,2 and NH groups (0.235 or less and 0.055 or less, respectively). These parameter changes in the composition enable the formation of high-quality siliceous films in micronized trench structures with minimal defects, thus resolving the contradiction between device integration and defect occurrence.
2Ease of manufacture
If conventional polysilazane compositions are used, then the formation process is simple, but sufficient defect reduction cannot be achieved
Solution Approach 1:
The patent applies parameter changes by precisely controlling the molecular weight distribution and chemical group ratios in the polysilazane composition. The weight-average molecular weight is set to 5,000 to 17,000, with SiH 1,2 ratio of 0.235 or less and NH ratio of 0.055 or less. These specific parameter changes maintain the simplicity of the coating and baking process while achieving sufficient defect reduction that conventional compositions cannot provide.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The perhydropolysilazane composition effectively forms siliceous films with reduced defects, minimal shrinkage, and low wet etching rates, enhancing the yield and quality of electronic devices by ensuring uniformity and density within fine trench structures.
Implementation Method 1
a composition comprising a silicon-containing polymer such as polysilazane, polysiloxane, polysiloxazane or polysilane is applied on a surface of a substrate or the like and baked to oxidize the silicon contained in the polymer to form a siliceous film
Data Source
Figure 1
AI summary
[Problem] To provide a perhydropolysilazane making it possible to form a siliceous film with minimal defects, and a curing composition comprising the perhydropolysilazane. [Means for Solution] The present invention provides a perhydropolysilazane having a weight-average molecular weight of 5,000 to 17,000, characterized in that when 1H-NMR of a 17% by weight solution of said perhydropolysilazane dissolved in xylol is measured, the ratio of the amount of SiH1,2 based on the aromatic ring hydrogen content of the xylol is 0.235 or less and the ratio of the amount of NH based on the aromatic ring hydrogen content of the xylol is 0.055 or less, and a curing composition comprising the perhydropolysilazane. The present invention also provides a method for forming a siliceous film, comprising coating the curing composition on a substrate and heating.