Gas Distribution Ring Channels for Uniform Process Chamber Flow

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Solution Overview

Problem

In plasma processing for integrated chip fabrication, uneven gas flow rates through gas vents in the shielding inset of process chambers lead to inconsistent material deposition and reliability issues, causing damage to the chamber components over time.

Innovation Solution

A gas distribution ring with evenly spaced gas inlets and conveyance channels is integrated within the shielding inset to ensure equal path lengths for gas flow, distributing process gas uniformly across the chamber and preventing peeling between components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If gas is supplied directly to gas vents without a distribution ring, then the structure is simple, but gas flow rates are uneven causing inconsistent deposition

Engineering Contradiction:
Improvedeposition uniformityVSAvoidgas distribution structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The gas distribution ring segments the gas supply into multiple controlled pathways. The ring structure divides the single gas source into multiple gas inlets around the perimeter, with each inlet feeding a dedicated gas conveyance channel. This segmentation allows independent control and equal distribution of gas flow to multiple vents, ensuring uniform deposition across the substrate surface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The gas distribution ring acts as an intermediary component between the gas source and the gas vents. It includes gas inlets positioned around its perimeter and gas conveyance channels that extend from these inlets to corresponding gas vents. This intermediary structure equalizes the gas flow path lengths and resistance, ensuring uniform gas distribution to all vents regardless of their position.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If gas conveyance paths have unequal lengths, then the structure is simpler, but gas flow rates vary causing peeling between components

Engineering Contradiction:
Improvecomponent bonding stabilityVSAvoidgas conveyance path configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gas distribution ring is designed to create equipotential gas flow paths. All gas conveyance channels extend from the gas distribution ring to gas vents at equal distances, ensuring that the gas flow path length and resistance are equalized across all channels. This equipotential design prevents pressure differentials that would cause uneven gas flow and subsequent peeling between the shielding inset and process chamber.

Inventive Principle:
Principle #12Equipotentiality

3Manufacturing precision

If gas inlets are not evenly spaced, then manufacturing is easier, but deposition uniformity deteriorates

Engineering Contradiction:
Improvematerial deposition consistencyVSAvoidgas inlet positioning
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The gas distribution ring implements local quality by positioning gas inlets at specific equidistant locations around its perimeter. Each gas inlet is strategically placed to correspond with a gas vent position, ensuring that the gas flow distribution matches the spatial requirements for uniform deposition. This localized positioning of gas inlets at critical points around the ring ensures consistent material deposition across the substrate.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240379330A1Gas distribution ring for process chamber
Publication Date: 2024.11.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240379330A1 patent drawing
  • US20240379330A1 patent drawing
  • US20240379330A1 patent drawing

AI summary

The present disclosure relates to an integrated chip processing tool. The integrated chip processing tool includes a gas distribution ring configured to extend along a perimeter of a process chamber. The gas distribution ring includes a lower ring extending around the process chamber. The lower ring has a plurality of gas inlets arranged along a bottom surface of the lower ring and a plurality of gas conveyance channels arranged along an upper surface of the lower ring directly over the plurality of gas inlets. The gas distribution ring further includes an upper ring disposed on the upper surface of the lower ring and covering the plurality of gas conveyance channels. A plurality of gas outlets are arranged along opposing ends of the plurality of gas conveyance channels. A plurality of gas conveyance paths extending between the plurality of gas inlets and the plurality of gas outlets have approximately equal lengths.