Semiconductor Substrate Film Processing With Periodic Nucleation Control
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Solution Overview
Problem
Existing substrate processing methods face challenges in regulating the characteristics of films formed on substrates, particularly in semiconductor device manufacturing, where controlling the nucleation process is crucial for film quality and uniformity.
Innovation Solution
A method involving the discontinuous formation of a nucleation inhibitor on a substrate by supplying a first agent, followed by film formation and regulating the amount of the inhibitor to a specific level, repeated a predetermined number of times, using a substrate processing apparatus with controlled gas supply and temperature regulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a film is formed by supplying precursor gas and reaction gas continuously, then the film formation efficiency is improved, but the uniformity and controllability of film characteristics deteriorate
Solution Approach 1:
The patent applies periodic action by alternating between supplying the first agent (nucleation inhibitor) and the second agent (film-forming gas) in discrete cycles. Each cycle consists of a first agent supply period followed by a second agent supply period, repeated multiple times. This periodic alternation allows controlled formation of nucleation inhibitors that regulate film characteristics while maintaining efficient film formation, resolving the contradiction between productivity and manufacturing precision.
2Manufacturing precision
If the amount of nucleation inhibitor is increased to improve film uniformity, then the film characteristic control is improved, but the formation time and process complexity increase
Solution Approach 1:
Instead of continuously supplying large amounts of nucleation inhibitor, the patent uses periodic action to supply the first agent in controlled cycles. Each cycle supplies a controlled amount of nucleation inhibitor that is then followed by film formation. This approach achieves effective film characteristic control while minimizing total formation time, as the inhibitor is supplied only when needed rather than continuously.
Solution Approach 2:
The patent applies preliminary action by supplying the nucleation inhibitor in advance during specific periods before the corresponding film formation occurs. The first agent is supplied during a first agent supply period, and then the second agent is supplied during a second agent supply period to form the film. This preliminary positioning of the nucleation inhibitor ensures optimal film characteristic control while maintaining efficient timing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity and control of film characteristics on substrates, improving the manufacturing process efficiency and quality of semiconductor devices.
Implementation Method 1
forming a nucleation inhibitor by supplying a first agent to a substrate
Implementation Method 2
forming a film on a surface of the substrate, the surface on which the nucleation inhibitor is formed
Data Source
AI summary
There is provided a technique that includes: a) forming a nucleation inhibitor discontinuously, by supplying a first agent to a substrate; b) forming a film on a surface of the substrate, the surface on which the nucleation inhibitor is formed; c) regulating an amount of the nucleation inhibitor to a first amount; and d) performing a), b), and c) a predetermined number of times.