Peripheral Body Diode Layout for Reverse Recovery in Power Semiconductors
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Solution Overview
Problem
As chip sizes increase, the area occupied by the body diode in the peripheral region of semiconductor devices decreases, leading to reduced ability to accommodate reverse current and deteriorating reverse recovery characteristics.
Innovation Solution
The semiconductor device incorporates a body diode structure in the peripheral region that extends from the second region of the first peripheral region to a portion of the first active region, including a first peripheral body diode region and a second peripheral body diode region, which enhances the capacity to handle reverse current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If chip size increases, then the semiconductor device can handle higher power and current ratings, but the area occupied by the body diode in the peripheral region decreases, reducing its ability to accommodate reverse current
Solution Approach 1:
The body diode structure is segmented into multiple regions: a first body diode region in the peripheral region and a second body diode region extending into the active cell region. This segmentation allows the body diode to accommodate reverse current effectively even as chip size increases, resolving the contradiction between power handling capacity and reverse recovery characteristics.
Solution Approach 2:
The body diode structure extends from the peripheral region into the active cell region, utilizing the vertical dimension and transitioning from a purely peripheral configuration to one that incorporates active cell area. This dimensional expansion increases the body diode area available for reverse current accommodation without proportionally increasing chip size.
2Quantity of substance
If chip size increases, then the semiconductor device can accommodate higher reverse current ratings, but the area occupied by the body diode decreases, deteriorating reverse recovery characteristics
Solution Approach 1:
The body diode structure merges the peripheral region with the active cell region, creating a continuous diode path that spans both areas. This merging ensures that the body diode can accommodate high reverse current while maintaining excellent reverse recovery characteristics, resolving the contradiction between reverse current capacity and reverse recovery performance.
3Area of stationary object
If the body diode area is reduced to accommodate larger chip sizes, then manufacturing costs decrease, but the ability to accommodate reverse current decreases
Solution Approach 1:
The body diode structure is strategically positioned with a first region in the peripheral area and a second region extending into the active cell region. This local quality optimization ensures that the body diode maintains adequate area for reverse current accommodation while allowing the overall chip size to increase, resolving the contradiction between body diode area and reverse current accommodation ability.
Data Source
AI summary
A semiconductor device comprising: a substrate, an active cell region comprising a first active region including a recessed region and a second active region on the substrate, an edge terminal region surrounding the active cell region on the substrate, a first peripheral region comprising a first region within the recessed region and a second region disposed between the first active region and the edge terminal region on the substrate, a second peripheral region disposed between the second active region and the edge terminal region, and a first body diode region extending from the second region of the first peripheral region to a portion of the first active region.