Peripheral-In Center-Out CVD Reactor Gas Flow

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Solution Overview

Problem

Conventional chemical vapor deposition reactors experience non-uniform deposition rates due to the central feeding design, where reaction gas concentration and mass flow rate decrease from the center to the peripheral areas of the susceptor, leading to inconsistent coating thickness.

Innovation Solution

A reaction device with a chamber, susceptor, inlet pipe unit, and outlet pipe design where reaction gases are fed horizontally into the peripheral area of the susceptor and guided towards the center, with the discharge opening positioned at the center to enhance uniformity by maintaining a higher mass flow rate and concentration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If reaction gas is fed via the center of the susceptor and discharged via the bottom, then the reaction gas can be supplied to the substrate, but the concentration and mass flow rate of reaction gas decrease along the flowing direction, causing non-uniform deposition with higher rates at the center than at the periphery

Engineering Contradiction:

Improvereaction gas concentrationVSAvoiddeposition uniformity

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent inverts the conventional gas flow direction by feeding reaction gas through the periphery of the susceptor and discharging it from the center, opposite to the traditional center-to-periphery approach. This inversion ensures that reaction gas maintains higher concentration and mass flow rate throughout the deposition area, achieving uniform deposition across the substrate surface.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent implements peripheral feeding openings that distribute reaction gas locally around the periphery of the susceptor. This local quality approach ensures that each region of the substrate receives adequate reaction gas supply, with the gas flowing radially inward to maintain consistent concentration across different zones, thereby achieving uniform deposition rates throughout the substrate area.

Inventive Principle:

Principle #3Local quality

2Device complexity

If reaction gas flows from the center to the periphery, then the feeding structure is simple, but the deposition rate varies significantly across the susceptor surface

Engineering Contradiction:

Improvefeeding structure complexityVSAvoidcoating thickness uniformity

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the gas feeding function by providing multiple peripheral feeding openings distributed around the periphery of the susceptor rather than a single central opening. This segmentation allows reaction gas to be supplied at multiple locations simultaneously, ensuring uniform distribution and consistent deposition across the entire substrate surface while maintaining structural simplicity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent inverts the conventional feeding architecture by placing feeding openings at the periphery instead of the center. This inverted configuration, combined with radial inward flow to a central discharge, creates a feeding structure that is both simple in concept and effective in achieving uniform deposition, resolving the contradiction between structural simplicity and deposition uniformity.

Inventive Principle:

Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design improves the uniformity of vapor deposition by ensuring consistent coating thickness across the susceptor, addressing the issue of higher deposition rates at the center compared to the peripheral areas.

Implementation Method 1

The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor

Methodology Applied

Scientific EffectConvection: Convection

Implementation Method 2

the reaction gas flows outwards from the center of the susceptor which supports the substrate and forms products on the surface of the substrate

Methodology Applied

Scientific EffectDiffusion: Diffusion

Implementation Method 3

a part of the gas forms products on the substrate (such as a wafer)

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS9340875B2Reaction device with peripheral-in and center-out design for chemical vapor deposition

Publication Date: 2016.05.17 IND TECH RES INST

AI summary

A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.