Same Size Die Stacked Package With Peripheral Through-Hole Vias
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Solution Overview
Problem
Current through-hole via (THV) technology in semiconductor devices limits the placement of additional circuitry within the device and reduces yields due to the need for wider saw streets when vias are located outside the semiconductor device.
Innovation Solution
The implementation of a THV stackable semiconductor device with integrated cavities and peripheral surface vias connected through metal traces, allowing for stacked semiconductor packages of the same size without the limitations of traditional THV technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a via is located within a semiconductor device, then the device can be stacked with other devices, but the placement of additional circuitry within the device is restricted
Solution Approach 1:
The patent moves the via location from the traditional planar dimension (within the die active area) to the peripheral dimension (along the saw street guide at the edge of the die). This dimensional relocation allows the active die area to remain fully available for circuitry placement while still enabling via formation for stacking capability.
2Productivity
If a via is located outside the semiconductor device along the saw street guide, then additional circuitry can be placed within the device, but wider saw streets are required which reduces wafer yields
Solution Approach 1:
The patent applies local quality by concentrating the via formation process specifically along the saw street guide region rather than requiring wide saw streets across the entire wafer. This localized approach allows standard-width saw streets to suffice, maintaining wafer yield while enabling peripheral via placement for enhanced circuitry flexibility.
Data Source
AI summary
A semiconductor package includes a substrate or leadframe structure. A plurality of interconnected dies, each incorporating a plurality of through-hole vias (THVs) disposed along peripheral surfaces of the plurality of dies, are disposed over the substrate or leadframe structure. The plurality of THVs are coupled to a plurality of bond pads through a plurality of a metal traces. A top surface of a first THV is coupled to a bottom surface of a second THV. An encapsulant is formed over a portion of the substrate or leadframe structure and the plurality of dies.