Perovskite Film via Adduct Precursor for Low-Temperature Growth
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Solution Overview
Problem
Existing methods for producing inorganic/organic hybrid perovskite compound films face challenges in achieving thick, dense, and smooth films with coarse crystal grains while avoiding thermal damage to substrates, due to rapid crystallization and volume changes during film formation.
Innovation Solution
A method involving the formation of a precursor film with an adduct of halogenated metal and a guest molecule, which reacts with an organic halide to form an inorganic/organic hybrid perovskite compound film through an intramolecular exchange reaction, allowing for thick film formation at low temperatures with minimal volume change and maintaining substrate integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a sequential deposition method is used to form thick metal halide film, then film thickness is increased, but reaction with organic halide is insufficient due to the thickness
Solution Approach 1:
The metal halide film is pre-formed with controlled thickness and morphology before introducing the organic halide. This preliminary preparation ensures that the subsequent reaction can proceed uniformly throughout the film thickness, solving the problem of insufficient reaction in thick films.
2Manufacturing precision
If conventional sequential deposition method is used, then inorganic/organic hybrid perovskite compound film is formed, but large volume change occurs causing excessive surface roughness
Solution Approach 1:
The invention changes the chemical parameters of the reaction system by selecting specific metal halides and organic halides with compatible molecular volumes and structures. This parameter optimization minimizes the volume change during the reaction, thereby reducing surface roughness and improving film smoothness.
3Productivity
If rapid crystallization occurs during film formation, then film formation speed is increased, but control of self-assembling properties becomes difficult
Solution Approach 1:
The invention introduces a solvent or additive as an intermediary substance that mediates the crystallization process. This intermediary controls the nucleation and growth rates, allowing rapid film formation while maintaining precise control over the self-assembling properties and crystal structure.
4Reliability
If high temperature is applied to maintain metal halide solution stability, then solubility is improved, but thermal damage to substrate occurs
Solution Approach 1:
The invention changes the temperature parameter by developing metal halide solutions with improved thermal stability through solvent selection and additive incorporation. This allows the solution to remain stable at lower temperatures, preventing thermal damage to the substrate while maintaining solution integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-quality, thick, dense, and smooth inorganic/organic hybrid perovskite compound films with coarse crystal grains, ensuring a flat surface and reducing thermal damage to substrates, while maintaining process stability and cost-effectiveness.
Implementation Method 1
reacting the precursor film with an organic halide to prepare an inorganic/organic hybrid perovskite compound film
Data Source
AI summary
The present invention relates to a method for preparing an inorganic/organic hybrid perovskite compound film, and a structure for a solar cell and, specifically, a method for preparing an inorganic/organic hybrid perovskite compound film, according to one embodiment of the present invention, can comprise the steps of: a) forming, on a substrate layer, an adduct layer containing an adduct of halogenated metal and guest molecule; and b) preparing an inorganic/organic hybrid perovskite compound film by reacting the adduct layer and an organic halide.