Perovskite Semiconductor Devices Using Carbon Electrodes
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Solution Overview
Problem
Perovskite-based semiconductor devices face challenges such as low operational stability, high manufacturing costs due to expensive components and complex processing requirements, and limited scalability, particularly in ambient conditions.
Innovation Solution
The use of conductive materials like graphene and graphite for electrodes and doping charge transportation layers in perovskite-based semiconductor devices, allowing for ink deposition and low-temperature processing, which enhances efficiency and stability while reducing production costs and complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal electrodes (gold or silver) and expensive hole transporting materials (spiro-MeOTAD and PTAA) are used, then device performance is improved, but manufacturing cost increases
Solution Approach 1:
The patent replaces expensive metal electrodes (gold, silver) with carbon-based electrodes deposited from inexpensive organic precursors. The hole transporting materials are replaced with cheaper alternatives such as poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) that can be processed from solution at low cost, thereby significantly reducing manufacturing cost while maintaining device performance
Solution Approach 2:
The patent changes the processing parameters from high-temperature vacuum deposition to low-temperature solution processing. The carbon-based electrodes are deposited from organic precursors at temperatures below 100°C, and the charge transporting layers are processed from solution at room temperature or slightly elevated temperatures, eliminating the need for expensive ultra-high vacuum equipment and reducing manufacturing complexity
2Manufacturing precision
If high temperature ultra-high vacuum deposition equipment is used, then electrode quality is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent replaces the mechanical vacuum deposition system with a solution-based deposition system. Instead of using ultra-high vacuum equipment to deposit metal electrodes, the invention uses liquid precursors that are deposited by simple coating techniques such as spin-coating, dip-coating, or spray-coating, followed by low-temperature thermal treatment. This substitution dramatically simplifies the manufacturing equipment requirements
Solution Approach 2:
The patent introduces organic precursor molecules as intermediaries to deliver carbon-based electrode materials. These precursors dissolve the carbon material in organic solvents, allowing the carbon to be deposited from solution rather than requiring direct vapor-phase deposition. This intermediary approach enables low-temperature processing and eliminates the need for complex vacuum systems
3Reliability
If conventional metal electrodes are used, then electrical conductivity is achieved, but production speed decreases due to thermal evaporation requirements
Solution Approach 1:
The patent changes the deposition temperature parameter from high temperature (required for thermal evaporation of metals) to low temperature (below 100°C) for carbon-based electrode deposition. The carbon electrodes are formed by heating the deposited organic precursor at low temperatures to decompose it into conductive carbon, a process that is much faster and can be performed in conventional ovens rather than requiring vacuum evaporation equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves power conversion efficiency, increases device stability, and simplifies production by eliminating the need for expensive metal electrodes and high-temperature processing, making the devices more scalable and cost-effective.
Implementation Method 1
a first charge transportation layer, wherein the first charge transportation layer is doped with the conductive material of the first electrode
Implementation Method 2
the conductive material is deposited by ink deposition (for example, layered material inks such as graphene and/or graphite)
Implementation Method 3
metal halide perovskite solar cells (PSCs) are considered the most promising photovoltaic (PV) technology
Data Source
AI summary
Semiconductor devices comprising: a semiconductor device comprising: a first electrode comprising conductive material, wherein the conductive material is deposited by ink deposition (for example, layered material inks such as graphene and/or graphite), or wherein the conductive material comprises CVD grown graphene or carbon nanotubes; a first charge transportation layer, wherein the first charge transportation layer is doped with the conductive material of the first electrode; an optional insulation layer; a perovskite active layer; a second charge transportation layer; and a second electrode.