Perovskite Dielectric Material for High-Capacitance Capacitors
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Solution Overview
Problem
Highly integrated semiconductor devices face challenges in maintaining capacitor capacity while reducing leakage current, as conventional methods like increasing electrode area or decreasing dielectric thickness have limitations.
Innovation Solution
A dielectric with a perovskite-type crystal structure, composed of oxides such as NaTaO3, is developed, which has a high dielectric constant and low dielectric loss, achieved through a method involving mixing alkali metals with transition metal precursors and performing thermal processes to create a sintered material with improved properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the electrode area of the capacitor is increased to maintain capacity, then the capacitor capacity is improved, but the device size increases
Solution Approach 1:
The patent changes the material parameter (dielectric constant) from conventional values to ultra-high values (100-1000) by developing new dielectric materials with specific crystal structures, allowing capacity enhancement without increasing device area
Solution Approach 2:
The patent employs composite dielectric materials combining multiple elements (e.g., Pb, Zr, Ti, Sn) in specific ratios to achieve ultra-high dielectric constants, enabling high capacity in compact form factors
2Quantity of substance
If the dielectric thickness is decreased to maintain capacity, then the capacitor capacity is improved, but the leakage current increases
Solution Approach 1:
The patent changes the material composition parameters by incorporating specific elements (Pb, Zr, Ti, Sn) in optimized ratios and controlling oxygen vacancy concentrations to achieve both high dielectric constant and low leakage current simultaneously
Solution Approach 2:
The patent creates local quality variations by controlling oxygen vacancy distribution and crystal structure characteristics within the dielectric material to enhance insulation properties while maintaining high dielectric constant
3Ease of manufacture
If conventional dielectric materials are used, then the manufacturing process is simple, but the dielectric constant is limited and leakage current is high
Solution Approach 1:
The patent modifies material composition parameters by adjusting the ratios of Pb, Zr, Ti, and Sn elements to achieve ultra-high dielectric constants while using conventional ceramic processing techniques
Solution Approach 2:
The patent utilizes phase transition characteristics during sintering to form specific crystal structures (e.g., perovskite structure) that exhibit ultra-high dielectric constants, leveraging thermodynamic phase changes for material property enhancement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric enhances capacitor capacity and reduces leakage current, achieving a high dielectric constant and low dielectric loss, suitable for advanced semiconductor devices.
Implementation Method 1
performing a first thermal process on the mixture in an air atmosphere at a temperature in a range of 1,000° C. to 1,400° C. for 1 hour to 20 hours to prepare a first sintered material
Implementation Method 2
performing a second thermal process on the molded article at a temperature of 1,400° C. or higher for 1 hour to 20 hours to prepare a second sintered material
Implementation Method 3
the dielectric having an improved dielectric constant and/or a low dielectric loss
Data Source
AI summary
Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:AxByO3-δ <Formula 1>wherein, in Formula 1,A is a monovalent, divalent, or trivalent cation,B is a trivalent, tetravalent, or pentavalent cation, and0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.