Perovskite Photoelectric Element Hole Transport Layer for Durability
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Solution Overview
Problem
Conventional perovskite-type solar cells suffer from insufficient photoelectric conversion efficiency and durability due to inadequate characteristics of the hole transport layer, particularly when using materials like Spiro-OMeTAD and PTAA, which have low heat and light resistance, and react with indium tin compounds, leading to electrode and photoelectric conversion layer contact issues.
Innovation Solution
A photoelectric conversion element with a laminated structure comprising a first electrode, a p-type metal oxide semiconductor layer, a hole transport layer containing a specific compound represented by Chemical Formula (I) or (II), and a perovskite compound, where the hole transport material forms a monomolecular layer on the p-type metal oxide semiconductor layer, enhancing chemical bonding and durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional hole transport materials (Spiro-OMeTAD, PTAA) are used, then the device can be manufactured, but heat resistance and light resistance are insufficient leading to poor durability
Solution Approach 1:
The patent uses a composite structure combining p-type metal oxide semiconductor particles (NiO, CuO, Cu2O, ZnO, or In2O3) with organic hole transport materials (triazine derivative compounds). This composite approach leverages the thermal stability of metal oxides while maintaining the hole transport capability of organic materials, thereby improving heat resistance and durability without sacrificing functionality.
2Productivity
If LiTFSI salt is added to improve conductivity, then hole transport efficiency increases, but element deterioration accelerates
Solution Approach 1:
The patent extracts and eliminates the LiTFSI salt component from the hole transport layer formulation. By using p-type metal oxide semiconductor particles combined with triazine derivative compounds, the invention achieves adequate conductivity without the harmful effects of LiTFSI salt on element durability, thereby removing the source of deterioration while maintaining transport efficiency.
3Ease of manufacture
If hole transport layer coverage is insufficient, then manufacturing is easier, but electrode and photoelectric conversion layer contact causes deterioration
Solution Approach 1:
The patent employs porous p-type metal oxide semiconductor particles that can form conformal coatings over electrode surfaces. The porous structure allows the material to penetrate and adhere to surface irregularities, ensuring complete coverage and preventing direct contact between the electrode and photoelectric conversion layer, thereby maintaining interface stability without complicating manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves photoelectric conversion characteristics and durability by using a p-type metal oxide semiconductor layer with a monomolecular layer of specific compounds, achieving enhanced stability and efficiency.
Implementation Method 1
the hole transport material forms a monomolecular layer on the p-type metal oxide semiconductor layer, enhancing chemical bonding and durability
Implementation Method 2
a photoelectric conversion layer, and a second electrode laminated in this order
Data Source
Figure 1~2
AI summary
An object of the present invention is to provide a photoelectric conversion element having excellent photoelectric conversion characteristics and improved durability. A photoelectric conversion element 10 according to an aspect of the present invention has a structure in which a first electrode 12, a hole transport layer 13, a photoelectric conversion layer 14, an electron transport layer 15, and a second electrode 16 are laminated in this order. The photoelectric conversion layer 14 contains a perovskite compound. The hole transport layer 13 includes a p-type metal oxide semiconductor layer 13-1 and a hole transport material layer 13-2. The hole transport material layer 13-2 contains a compound represented by the following Chemical Formula (I). Ar1-(L1-X1)n ... (I) In Chemical Formula (I), Ar1 is a structure including an aromatic ring, atoms constituting the aromatic ring may contain a heteroatom, and Ar1 may have a substituent other than - L1-X1. n is an integer of 1 or more, and when n is 2 or more, structures represented by -L1-X1 may be the same as or different from each other. L1 is a divalent linking group bonding Ar1 to X1 or a single bond. X1 is a group capable of forming a chemical bond or a hydrogen bond with the p-type metal oxide semiconductor.