Perovskite Hole Transport Layers via Sputtering and Annealing
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Solution Overview
Problem
Existing perovskite solar cells face challenges in mass production due to the use of toxic solvents in solution spin-coating and limitations of sintering, which affect film uniformity and interfacial issues, limiting their practical application and efficiency.
Innovation Solution
A method for preparing perovskite cells with multiple hole transport layers using magnetron sputtering and annealing treatments in controlled atmospheres to form nickel oxide layers, allowing for continuous production and improved film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If solution spin-coating is used to prepare hole transport layer, then the process is simple, but toxic solvents are required and film uniformity cannot be controlled for large area
Solution Approach 1:
The patent changes the preparation method from solution-based spin-coating to vapor-phase sputtering, fundamentally altering the physical state and delivery mechanism of the hole transport layer material. This eliminates toxic solvent usage while maintaining processability through controlled vapor deposition parameters
Solution Approach 2:
The patent replaces the mechanical spin-coating process with a vapor-phase sputtering process, substituting one deposition mechanism with another that inherently avoids liquid solvents. The sputtering process uses physical vapor deposition rather than mechanical solution processing
2Productivity
If sintering is used to prepare hole transport layer, then a single film layer is produced, but mass production is not conducive and interfacial problems cannot be alleviated
Solution Approach 1:
The patent divides the hole transport layer into multiple sub-layers (first hole transport layer and second hole transport layer) with different compositions and functions. This segmentation allows each layer to be optimized for specific purposes: the first layer for electron blocking and the second layer for hole extraction, thereby improving interfacial quality while maintaining mass production capability through continuous sputtering processes
3Manufacturing precision
If multiple hole transport layers are formed with different sputtering atmospheres, then film quality and uniformity are improved, but the process complexity increases
Solution Approach 1:
The patent applies local quality by creating different sputtering atmospheres for different layers: an oxygen-rich atmosphere for the first hole transport layer to achieve electron blocking properties, and an argon-rich atmosphere for the second hole transport layer to optimize hole extraction. Each layer receives tailored atmospheric conditions suited to its specific functional requirements, improving overall film quality and uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables high-quality, uniform film formation, reduces surface defects, and enhances electrical performance, facilitating mass production and increased efficiency of perovskite cells.
Implementation Method 1
a process of forming the multiple hole transport layers includes: (1) sputtering a nickel oxide target material in a first atmosphere to form a first hole transport layer
Implementation Method 2
performing annealing treatment on the first hole transport layer, wherein the annealing treatment is performed for 1-45 minutes under a temperature of 200-500°C
Data Source
Figure 1~2
AI summary
This application provides a method for preparing a perovskite cell with multiple hole transport layers. The method includes a process of forming the multiple hole transport layers, where the process of forming the multiple hole transport layers includes the following steps: (1) sputtering a nickel oxide target material in a first atmosphere to form a first hole transport layer, where the first atmosphere contains argon and oxygen, and a volume ratio of the argon to the oxygen is approximately 0:1 to 1.5: 1; (2) performing annealing treatment on the first hole transport layer; and (3) sputtering the nickel oxide target material onto the first hole transport layer subjected to the annealing treatment in a second atmosphere to form a second hole transport layer, where the second atmosphere contains argon-containing gas and oxygen, a volume ratio of the argon-containing gas to the oxygen is approximately 1:0 to 4:1, and the argon-containing gas contains argon, and optionally hydrogen. This application further provides a perovskite cell (100) with multiple hole transport layers prepared by using the above method.