Perovskite Gain Layer Laser for Low-Temperature PIC Integration
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Solution Overview
Problem
Integrating lasers into photonic integrated circuits is challenging due to incompatible fabrication processes for laser gain materials and substrate materials, particularly for silicon platforms which require complex and costly high-temperature procedures.
Innovation Solution
A laser design featuring a substrate, distributed Bragg reflectors, electrodes, and a gain layer with a Perovskite crystal structure, where the gain layer is deposited via spin-coating or evaporation deposition, enabling coherent light emission when current is applied, and optionally incorporating a distributed feedback waveguide for improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional inorganic materials like GaAs or GaN are used as gain layer for laser integration on silicon platform, then laser functionality can be achieved, but fabrication complexity and cost increase due to complex high-temperature procedures
Solution Approach 1:
The patent changes the material parameter from traditional inorganic semiconductors (GaAs, GaN) to perovskite materials, which enables laser operation at lower temperatures and with simpler fabrication processes while maintaining the essential laser gain functionality
Solution Approach 2:
The patent employs perovskite gain layers that can be deposited using low-cost solution-based techniques such as spin-coating, replacing expensive and complex molecular beam epitaxy processes, thereby reducing fabrication cost and complexity
2Reliability
If traditional inorganic materials like GaAs or GaN are used as gain layer for laser integration on silicon platform, then laser functionality can be achieved, but fabrication cost increases due to complex high-temperature procedures
Solution Approach 1:
The patent changes the material parameter from traditional inorganic semiconductors (GaAs, GaN) to perovskite materials, which enables laser operation at lower temperatures and with simpler fabrication processes while maintaining the essential laser gain functionality
Solution Approach 2:
The patent employs perovskite gain layers that can be deposited using low-cost solution-based techniques such as spin-coating, replacing expensive and complex molecular beam epitaxy processes, thereby reducing fabrication cost and complexity
3Ease of manufacture
If perovskite gain layer is deposited via spin-coating or evaporation deposition, then fabrication complexity and cost are reduced, but integration compatibility with existing photonic circuits must be maintained
Solution Approach 1:
The patent structures the laser as a vertically stacked device with distinct functional layers (DBR mirrors, transport layers, perovskite gain layer, waveguide) that can be independently optimized and integrated with existing photonic circuit platforms
Solution Approach 2:
The patent introduces transport layers as intermediary components between the electrodes and the perovskite gain layer, enabling efficient charge injection while maintaining compatibility with the solution-based deposition process and existing photonic platforms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates the integration of lasers into photonic integrated circuits with reduced complexity and cost, enabling efficient coherent light emission and potentially advancing computing and communication systems.
Implementation Method 1
the laser is configured such that a current flowing through the gain layer between the first electrode and the second electrode causes the gain layer to emit coherent light
Implementation Method 2
a first distributed Bragg reflector (DBR) positioned between the substrate and the first electrode; a second DBR
Implementation Method 3
forming, via spin coating deposition or evaporation deposition, a gain layer on the first transport layer
Implementation Method 4
forming, via spin coating deposition or evaporation deposition, a gain layer on the first transport layer
Data Source
AI summary
Within examples, a laser includes a first electrode and a second electrode; a first transport layer and a second transport layer that are between the first electrode and the second electrode; a gain layer positioned between the first transport layer and the second transport layer, where the gain layer comprises a material having a Perovskite crystal structure; and a substrate on which the first electrode, the second electrode, the first transport layer, the second transport layer, and the gain layer are formed, where a distributed feedback (DFB) waveguide is formed within the first transport layer, and where the laser is configured such that a current flowing through the gain layer between the first electrode and the second electrode causes the gain layer to emit coherent light. Examples also include methods for fabricating the laser, as well as additional lasers and methods for forming those lasers.