Perovskite Multiferroic Composition for Bulk Room-Temperature Coupling
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Solution Overview
Problem
Current multiferroicity materials with ferroelectricity and ferromagnetism at room temperature are limited to BiFeO3 and thin-film ferrimagnetic materials, lacking in bulk single-phase implementation due to antiferromagnetic properties and low magnetoelectric coupling, which hinders their application in electronic devices.
Innovation Solution
A room-temperature multiferroicity material composed of (Pb1-xTMx)Fe1/2Nb1/2O3 with a perovskite structure, where TM includes Fe, Ni, or Co, exhibiting a morphotropic phase boundary between rhombohedral and tetragonal phases, and prepared through a method involving mixing lead and iron oxides with ferromagnetic elements, calcination, and sintering to achieve strong ferromagnetism and ferroelectricity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If BiFeO3 or thin-film ferrimagnetic materials are used to achieve room-temperature multiferroicity, then ferroelectricity and ferromagnetism can be obtained, but the materials are limited to thin-film types and lack bulk single-phase implementation
Solution Approach 1:
The patent uses composite material (Pb1-xTMx)Fe1/2Nb1/2O3 combining lead ferroniobate with ferromagnetic elements (Fe, Ni, or Co) to achieve room-temperature multiferroicity in bulk single-phase form, resolving the contradiction between operating temperature and material phase complexity
Solution Approach 2:
The patent changes compositional parameters by substituting TM elements at specific concentrations (0 < x ≤ 0.5) to transform the magnetic properties from antiferromagnetic to ferromagnetic while maintaining ferroelectricity and achieving bulk single-phase formation
2Reliability
If conventional multiferroic materials are used, then ferroelectricity can be achieved, but magnetoelectric coupling is weak
Solution Approach 1:
The patent changes the magnetic parameter by introducing ferromagnetic elements (Fe, Ni, Co) into the ferroniobate structure, which fundamentally alters the magnetic coupling mechanism from weak antiferromagnetic to strong ferromagnetic coupling while preserving ferroelectric properties
3Quantity of substance
If bulk-type multiferroicity materials are synthesized, then material quantity is sufficient, but antiferromagnetic properties dominate
Solution Approach 1:
The patent changes the magnetic ordering parameter by substituting ferromagnetic elements into the B-site of the perovskite structure, which transforms the dominant antiferromagnetic interactions into ferromagnetic interactions while maintaining bulk material synthesis
Solution Approach 2:
The patent converts the harmful antiferromagnetic properties into beneficial ferromagnetic properties by strategic element substitution, where the same crystal structure that originally produced antiferromagnetism is modified to produce the desired ferromagnetism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material achieves a strong combination of ferromagnetism and ferroelectricity with enhanced magnetoelectric coefficients and piezoelectric properties, suitable for various electronic devices, overcoming previous limitations of antiferromagnetic properties and low magnetoelectric coupling.
Implementation Method 1
room-temperature multiferroicity material which has ferromagnetism and ferroelectricity
Implementation Method 2
room-temperature multiferroicity material which has ferromagnetism and ferroelectricity
Implementation Method 3
the room-temperature multiferroicity material may have piezoelectricity
Data Source
AI summary
The present invention relates to a room-temperature multiferroicity material, a method for preparing same, and an electronic device comprising same. According to an example embodiment of the present invention, a room-temperature multiferroicity material according to an aspect of the present disclosure comprises a compound in chemical Formula (2) below in a compound matrix in chemical formula (1) below. Chemical formula (1) (Pb1-xTMx)Fe1/2Nb1/2O3 (in chemical formula (1), TM comprises at least one selected from the group consisting of Fe, Ni and Co, and x is a number greater than 0 and smaller than 1). Chemical formula (2) ABO3 (in chemical formula (2), A comprises at least one selected from the group consisting of Pb, Bi and Ba, and B comprises Ti and/or Zr).


