Perovskite Quantum Well Stack With Epitaxial Pulsed Laser Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing optoelectronic devices with multiple quantum well stacks face limitations in performance and stability, particularly in using inorganic perovskite materials for quantum wells and III-V compounds as barriers, which require improved crystal alignment and deposition methods to enhance light emission and absorption efficiency.
Innovation Solution
A method of manufacturing optoelectronic devices with a stack of alternating inorganic perovskite quantum well layers and III-V compound barrier layers, where each layer is deposited by pulsed laser deposition to ensure epitaxial alignment and stability, enhancing light conversion and emission properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If inorganic perovskite materials are used for quantum wells and III-V compounds as barriers, then light emission and absorption efficiency is improved, but crystal alignment and deposition control become more difficult
Solution Approach 1:
The patent combines the deposition of inorganic perovskite quantum well layers and III-V compound barrier layers in a single deposition chamber using pulsed laser deposition. This merging of deposition processes ensures precise crystal alignment between alternating layers while maintaining high light emission and absorption efficiency, resolving the contradiction between improved performance and manufacturing difficulty
Solution Approach 2:
The patent employs pulsed laser deposition to precisely control deposition parameters such as laser pulse duration, energy density, and substrate temperature. By optimizing these parameters, the method achieves both high crystal alignment quality and superior light emission/absorption efficiency in the multiple quantum well structure
2Reliability
If multiple alternating layers are deposited to form quantum wells, then light conversion efficiency is improved, but deposition time and process complexity increase
Solution Approach 1:
The patent merges the deposition of multiple alternating perovskite and III-V layers into a continuous pulsed laser deposition process within a single chamber. This eliminates the need for chamber evacuation and reloading between layers, significantly reducing total deposition time while maintaining high light conversion efficiency through precise control of each layer's thickness and composition
Solution Approach 2:
The pulsed laser deposition method uses periodic laser pulses to deposit alternating layers of different materials. Each laser pulse creates a controlled deposition event that forms a specific layer, and by adjusting the pulse frequency and duration, the process efficiently builds multiple quantum well layers with high light conversion efficiency without excessive deposition time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in high internal quantum efficiency, improved stability, and efficient light conversion, suitable for small pixel displays and long-lasting light emission elements, with the ability to convert light at specific wavelengths, improving overall optoelectronic device performance.
Implementation Method 1
the layers of the first material and the layers of the second material are deposited by pulsed laser deposition
Implementation Method 2
each layer of the first material has a crystal structure aligned with the crystal structure of the underlying layer of the second material, according to an epitaxial relationship
Implementation Method 3
the multiple quantum well stack being arranged on one face of the LED and being adapted to convert the light emitted by the LED
Data Source
Figure 1~3
AI summary
The present description relates to an optoelectronic device comprising an integrated control circuit and, on one face of said integrated circuit, a stack (100) comprising an alternation of at least one semiconductor layer (101) of a first material and of semiconductor layers (103) of a second material, each layer (101) of the first material being sandwiched between two layers (103) of the second material and defining a quantum well, wherein the first material is an inorganic perovskite material and the second material is an inorganic semiconductor material.