Perovskite RRAM Heterojunction Stability via Polymer Encapsulation
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Solution Overview
Problem
Conventional resistive random access memory devices face challenges with unstable resistance distribution and low durability due to the use of oxide-based solid electrolyte materials, which are sensitive to moisture and light, and perovskite thin films used in previous solutions exhibit low stability and durability.
Innovation Solution
A resistive random access memory device is developed with a heterojunction structure comprising a three-dimensional perovskite crystal structure and a two-dimensional perovskite crystal structure, along with a polymer protective layer, to enhance stability and durability, using organic metal halides and specific solvents in the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If oxide-based solid electrolyte materials are used in resistive random access memory devices, then the device structure is simple and fabrication is easy, but the resistance distribution becomes unstable and durability decreases due to sensitivity to moisture and light
Solution Approach 1:
The patent uses a composite structure combining organic metal halide perovskite material with a polymer protective layer. This composite approach allows the device to maintain the simple fabrication process of oxide-based materials while achieving superior stability against moisture and light through the protective polymer encapsulation, thereby resolving the contradiction between ease of manufacture and reliability.
Solution Approach 2:
The polymer protective layer acts as an intermediary barrier between the organic metal halide perovskite resistance change layer and the external environment (moisture and light). This mediator protects the sensitive perovskite material from degradation while allowing the device to be fabricated using simple solution-processing methods, thus maintaining ease of manufacture while improving stability.
2Use of energy by moving object
If perovskite thin films are used as resistance change layers, then voltage and efficiency are improved, but stability and durability decrease due to low moisture and light stability
Solution Approach 1:
The patent creates a composite structure where the organic metal halide perovskite layer (providing low voltage operation and high efficiency) is combined with a polymer protective layer (providing stability against moisture and light). This composite approach enables the device to achieve both improved voltage characteristics and enhanced durability simultaneously.
Solution Approach 2:
The polymer protective layer forms a flexible protective shell around the perovskite resistance change layer, shielding it from environmental degradation. This thin film encapsulation maintains the low voltage operation benefits of perovskite while providing the necessary protection for long-term stability and durability.
3Device complexity
If a single-layer perovskite structure is used, then the device structure is simple, but moisture and light stability is insufficient
Solution Approach 1:
The patent employs a composite structure consisting of an organic metal halide perovskite resistance change layer and a polymer protective layer. This composite design adds minimal complexity while effectively addressing moisture and light stability issues, as the polymer layer provides environmental protection without significantly increasing device complexity.
Solution Approach 2:
The polymer protective layer serves as a thin film encapsulation that protects the perovskite layer from harmful environmental factors. This approach maintains relative structural simplicity while providing effective protection against moisture and light, resolving the contradiction between device complexity and stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly improves the stability and durability of the resistive random access memory device against moisture and light exposure, maintaining performance and reliability even after exposure, with controlled filament size and enhanced SET/RESET voltages.
Implementation Method 1
The resistance of the resistive random access memory device is changed as a metal filament is formed and eliminated by redox reactions of metal atoms or metal ions permeating from a metal electrode into the resistance change layer depending on a voltage applied to the resistance change layer
Implementation Method 2
a metal filament is formed and eliminated by redox reactions of metal atoms or metal ions permeating from a metal electrode into the resistance change layer depending on a voltage applied to the resistance change layer
Data Source
AI summary
The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.