Perovskite Solar Cell Sintering via Intense Pulsed Light

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Solution Overview

Problem

Perovskite solar cells face challenges in achieving large crystal sizes and dense surface coverage due to the instability of methylammonium lead iodide, which limits sintering temperatures and results in poor morphology and performance, especially when manufactured under ambient conditions.

Innovation Solution

The method involves depositing a perovskite layer on a substrate and sintering it using intense pulsed light (IPL), which allows for temperatures above the degradation point without degrading the material, creating large crystal sizes and maintaining surface coverage, even under ambient conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Shape

If conventional thermal annealing is used to increase crystal size and improve surface coverage, then grain boundaries are reduced and charge transfer is enhanced, but the perovskite material decomposes into lead iodide and methylammonium iodide at temperatures above 150°C

Engineering Contradiction:
Improvecrystal sizeVSAvoidmaterial stability
Core Design Contradiction:
ShapeVSReliability

Solution Approach 1:

The patent employs rapid thermal annealing that induces transient phase transitions in the perovskite material, heating it above 150°C for very short durations (seconds to minutes) to promote crystal growth and surface coverage, then rapidly cooling to prevent decomposition. This controlled phase transition approach allows the material to temporarily access high-temperature phases that enhance crystallization without permanently decomposing into lead iodide and methylammonium iodide.

Inventive Principle:
Principle #36Phase transitions

Solution Approach 2:

The patent utilizes periodic heating and cooling cycles during the annealing process, applying thermal energy in controlled intervals rather than continuous heating. This periodic thermal action allows the perovskite to undergo repeated cycles of crystal growth followed by stabilization, enabling progressive improvement in surface coverage and crystal size while preventing cumulative thermal degradation that would occur with sustained high-temperature exposure.

Inventive Principle:
Principle #19Periodic action

2Area of stationary object

If high temperature annealing is applied to improve surface coverage, then pore filling is enhanced, but the morphology transitions from continuous layer to discrete islands due to agglomeration

Engineering Contradiction:
Improvesurface coverageVSAvoidmorphology
Core Design Contradiction:
Area of stationary objectVSShape

Solution Approach 1:

The patent applies preliminary low-temperature treatment or controlled solvent annealing before the main high-temperature annealing step. This preliminary action pre-organizes the perovskite precursors and fills pores at lower temperatures where agglomeration is minimized, creating a more uniform initial structure that can then be densified at higher temperatures without transitioning to discrete island morphology.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent systematically varies multiple parameters including annealing temperature, time, atmosphere composition, and cooling rate to optimize the balance between surface coverage and morphology. By changing these parameters in combination rather than relying on high temperature alone, the process achieves complete pore filling and continuous layer formation while suppressing the agglomeration that would lead to discrete island structures.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If rapid processing is used to improve productivity and enable scalable manufacturing, then production time is reduced, but crystal growth and surface coverage are compromised

Engineering Contradiction:
Improveproduction speedVSAvoidfilm quality
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent replaces conventional slow thermal diffusion-based annealing with rapid thermal processing using flash heating or microwave annealing techniques. These alternative heating mechanisms transfer energy much faster than conventional conduction-based heating, enabling complete perovskite formation, crystal growth, and pore filling in seconds to minutes rather than hours, thereby achieving both high productivity and high film quality simultaneously.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent employs periodic pulsed heating cycles with very short duration (milliseconds to seconds) repeated multiple times. Each pulse provides sufficient energy for localized crystal growth and pore filling, while the brief intervals between pulses allow rapid heat dissipation that prevents bulk material degradation. This periodic action accumulates the beneficial effects of multiple heating events while maintaining overall process speed for scalable manufacturing.

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the density and surface coverage of perovskite layers, improving the efficiency and stability of perovskite solar cells, enabling their production in a scalable and cost-effective manner.

Implementation Method 1

sintering it using intense pulsed light (IPL), which allows for temperatures above the degradation point without degrading the material

Methodology Applied
Scientific EffectIntense pulsed light heating: Heating

Implementation Method 2

sintering the perovskite layer with intense pulsed light

Methodology Applied
Scientific EffectSintering: Sintering

Data Source

PatentUS10937978B2Methods for forming a perovskite solar cell
Publication Date: 2021.03.02 UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION INC
  • US10937978B2 patent drawing
  • US10937978B2 patent drawing
  • US10937978B2 patent drawing

AI summary

A perovskite thin film and method of forming a perovskite thin film are provided. The perovskite thin film includes a substrate, a hole blocking/electron transport layer, and a sintered perovskite layer. The method of forming the perovskite solar cell includes depositing a perovskite layer onto a substrate and sintering the perovskite layer with intense pulsed light.