Perylene Diimide Derivative for Solution-Processed Organic Transistors
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Solution Overview
Problem
Current organic semiconductor materials for thin-film transistors have low solubility in solvents, limiting their formation to vapor deposition and making it difficult to achieve uniform films over large areas, and require complex processes with halogen atoms, increasing fabrication costs.
Innovation Solution
A perylene tetracarboxylic diimide derivative with alkyl groups and oxygen atoms is used, allowing for high solubility in organic solvents and enabling film formation by solution coating or printing processes, reducing costs and improving transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vapor deposition is used to form organic semiconductor thin films, then film formation is achieved, but the process is limited and cannot achieve uniform films over large areas
Solution Approach 1:
The patent replaces the mechanical vapor deposition process with a solution-based coating process. The organic semiconductor material is dissolved in a solvent to form a solution, which is then coated onto the substrate using solution coating techniques. This substitution enables large-area uniform film formation while maintaining material performance.
Solution Approach 2:
The patent modifies the physical and chemical parameters of the organic semiconductor material by introducing specific molecular structures (such as fused ring structures and heteroatom substitutions) that enhance solubility in organic solvents. This parameter change allows the material to be processed in solution form, enabling large-area coating applications.
2Reliability
If complex processes with halogen atoms are used, then transistor performance is improved, but fabrication costs increase
Solution Approach 1:
The patent changes the molecular structure parameters by substituting heteroatoms (such as oxygen, sulfur, or nitrogen) into the organic semiconductor framework. This structural modification achieves high transistor performance without requiring complex halogen-based processes, thereby reducing fabrication costs while maintaining device reliability.
Solution Approach 2:
The patent employs composite molecular structures combining fused rings with heteroatom substitutions to achieve superior transistor characteristics. This composite approach provides high performance through material design rather than complex processing, simplifying manufacturing and reducing costs.
3Ease of manufacture
If conventional organic semiconductor materials are used, then film formation is achieved, but solubility in solvents is low
Solution Approach 1:
The patent modifies the compositional parameters of the organic semiconductor by introducing solubilizing groups and optimizing molecular weight and structure. These changes enhance solvent compatibility while preserving the essential semiconductor properties and compositional stability required for device performance.
Data Source
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AI summary
Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): In the formula (1), R1 means a linear or branched alkyl group having from 1 to 20 carbon atoms, R2 means a linear or branched alkyl group having from 2 to 6 carbon atoms, R3 means a linear or branched alkyl group having from 2 to 6 carbon atoms, X1 and X2 each mean a heteroatom selected from an oxygen atom, sulfur atom or selenium atom, Y means a halogen atom or cyano group, m stands for a number of from 0 to 4, and n stands for a number of from 0 to 2. Further, the alkyl groups represented by R1 and R2 may each be substituted with one or more fluorine atoms.