PFAS-Free Organic Underlayer Film for Uniform Resist Patterning
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Solution Overview
Problem
Existing film formation materials face challenges in achieving uniformity, flatness, and filling properties on complex substrates, particularly with the need for alternatives to perfluoroalkyl compounds due to environmental restrictions, while ensuring high etching resistance and pattern transfer accuracy in semiconductor manufacturing.
Innovation Solution
A composition comprising a benzenesulfonic acid salt compound with a specific molecular weight and substituents is used to form an organic film, providing excellent coating properties, in-plane uniformity, and filling capabilities, suitable for use as an underlayer film in multilayer resist processes, and as a resist material in photolithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If perfluoroalkyl compounds are used as film formation materials, then excellent coating properties and filling properties are achieved, but environmental restrictions and health concerns arise
Solution Approach 1:
The patent changes the chemical composition parameters by replacing perfluoroalkyl compounds with benzenesulfonic acid salt compounds having specific molecular weights (200 or more) and specific structures (formula 1). This parameter change maintains the desirable coating and filling properties while eliminating the harmful environmental associations with perfluoroalkyl compounds.
Solution Approach 2:
The patent creates a composite film formation material combining benzenesulfonic acid salt compounds with specific polymers and additives. This composite approach allows the material to achieve the necessary coating and filling properties without relying on perfluoroalkyl compounds, thus meeting environmental requirements.
2Reliability
If conventional organic underlayer films are used, then dry etching properties are achieved, but filling property and uniformity on complex substrates are insufficient
Solution Approach 1:
The patent modifies the chemical and physical parameters of the organic underlayer film by incorporating benzenesulfonic acid salt compounds with specific molecular weights and structures. This changes the film's coating and filling properties to achieve superior uniformity on complex substrates while maintaining dry etching performance.
Solution Approach 2:
The patent enhances the local quality of the film formation material by using benzenesulfonic acid salt compounds that provide improved coating properties specifically at critical interfaces. This local enhancement ensures uniform film formation on complex substrate geometries while maintaining overall dry etching resistance.
3Productivity
If thin resist patterns are used for higher integration, then miniaturization is achieved, but pattern formation becomes difficult and film thickness is insufficient
Solution Approach 1:
The patent introduces an additional dimension to the resist structure by combining conventional photoresist with an organic underlayer film containing benzenesulfonic acid salt compounds. This multilayer approach allows the upper photoresist layer to be made thinner for higher integration while the underlayer provides the necessary mechanical support and uniformity for accurate pattern formation.
Solution Approach 2:
The patent creates a composite resist system combining photoresist with benzenesulfonic acid salt-containing organic underlayer. This composite structure enables thinner photoresist patterns for higher integration levels while maintaining sufficient film thickness and uniformity through the supporting underlayer, thereby facilitating accurate pattern formation.
4Object-affected harmful factors
If EBR process is performed to remove edge film, then substrate contamination is prevented, but hump formation occurs in peripheral portions
Solution Approach 1:
The patent changes the chemical composition parameters of the organic underlayer film by incorporating benzenesulfonic acid salt compounds with specific molecular weights. This parameter change modifies the film's response to EBR process, enabling effective edge removal while suppressing hump formation in peripheral portions through improved coating properties.
Data Source
AI summary
A composition for forming an organic film, contains: a resin and/or compound (A); a benzenesulfonic acid salt compound (B) represented by the following formula (1), an anion moiety in the formula (1) having a molecular weight of 200 or more, and the compound (B) not containing a perfluoroalkyl group; and a solvent (C). Thus, the composition makes it possible to form a film excellent in coating properties, such as coating defects, film-formability, and filling property results, when used as an organic underlayer film for a multilayer resist, that is also useful as a photoresist material, and that contains a benzenesulfonic acid salt that is not a perfluoroalkyl compound (PFAS); a patterning process using the composition; and a compound suitable for the composition.