Diffusion Break Gate Structure for PFET Isolation Without Stress Shift
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Solution Overview
Problem
The formation of diffusion break structures in semiconductor devices can alter stress distribution in active regions, leading to performance deterioration of transistor devices, and complicates the fabrication process due to the need for wiring.
Innovation Solution
A semiconductor device incorporating a single diffusion break (SDB) or double diffusion break (DDB) structure, which includes an insulating layer, semiconductor layers, and a conductive gate material over an opening in an insulating pattern, providing electrical isolation while minimizing stress changes and simplifying the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diffusion break structures are formed to provide electrical isolation between transistor devices, then electrical isolation is improved, but stress distribution in active regions is undesirably changed leading to performance deterioration
Solution Approach 1:
The patent applies local quality by creating a diffusion break structure with specific local characteristics - an insulating layer selectively positioned between active regions to provide electrical isolation only where needed, while maintaining the stress distribution in the active regions themselves. The insulating layer is formed with controlled thickness and positioning to achieve isolation without adversely affecting the stress state of the transistor active regions.
2Reliability
If diffusion break structures are formed with wiring to provide electrical isolation, then electrical isolation is improved, but the fabrication process becomes relatively complicated
Solution Approach 1:
The patent merges the electrical isolation function with the existing gate structure formation process. The insulating layer is formed as part of the gate stack structure, combining the isolation function with the gate electrode formation. This integration eliminates the need for separate wiring structures and reduces fabrication process complexity while maintaining effective electrical isolation between active regions.
Solution Approach 2:
The insulating layer structure serves multiple functions simultaneously: it provides electrical isolation between adjacent active regions, acts as part of the gate stack structure, and can be formed using standard deposition processes already present in the fabrication flow. This multi-functionality reduces the need for additional specialized processing steps.
Data Source
AI summary
A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.