Phase Change Fuse Element with Sublithographic Electrode
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Solution Overview
Problem
Conventional fuse devices require high current and occupy large space on semiconductor chips due to the need for high power to blow fuse elements, and alternative methods like laser processing have limited applications and low manufacturing yield.
Innovation Solution
A fuse device with a phase change material and sublithographic electrodes, where the phase change material undergoes a phase change with a pulse current of less than 3 mA, reducing the blow-out current and chip area occupation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional metal or polysilicon fuse elements are used, then the fuse device can be manufactured with existing processes, but high current (milliamps range) is required to blow the fuse element, resulting in high power consumption and large chip area occupation
Solution Approach 1:
The patent changes the material parameter from conventional metal/polysilicon to phase change material (chalcogenide), which fundamentally alters the blowing mechanism from resistive heating to phase transition. This material parameter change enables the fuse to operate at much lower currents (microamps range) while maintaining manufacturability through existing semiconductor fabrication processes
Solution Approach 2:
The patent exploits the phase transition property of chalcogenide materials, which can reversibly switch between crystalline and amorphous states. The fuse element blows by inducing a phase transition from crystalline to amorphous state through localized heating, enabling low-power operation compared to conventional fuse materials that rely solely on resistive heating and melting
2Ease of manufacture
If conventional metal or polysilicon fuse elements are used, then the fuse device can be manufactured with existing processes, but high current is required to blow the fuse element, resulting in large chip area occupation
Solution Approach 1:
The patent changes the material parameter from conventional metal/polysilicon to phase change material (chalcogenide), which fundamentally alters the blowing mechanism from resistive heating to phase transition. This material parameter change enables the fuse to operate at much lower currents (microamps range) while maintaining manufacturability through existing semiconductor fabrication processes
Solution Approach 2:
The patent exploits the phase transition property of chalcogenide materials, which can reversibly switch between crystalline and amorphous states. The fuse element blows by inducing a phase transition from crystalline to amorphous state through localized heating, enabling low-power operation compared to conventional fuse materials that rely solely on resistive heating and melting
3Use of energy by moving object
If laser light is used to blow the fuse element, then lower current is required, but the process is performed prior to chip packaging resulting in low manufacturing yield and limited applications
Solution Approach 1:
The patent incorporates the fuse element and its phase change material directly into the semiconductor fabrication process flow, performing all necessary preparations and integrations during chip manufacturing. This preliminary action eliminates the need for post-packaging laser processing, ensuring high manufacturing yield and enabling widespread application across different packaging and testing scenarios
4Ease of manufacture
If high current is used to blow the fuse element, then the fuse device can be manufactured with existing processes, but the time required to blow the fuse element is on the order of milliseconds, resulting in high power consumption
Solution Approach 1:
The patent changes the material parameter from conventional metal/polysilicon to phase change material (chalcogenide), which fundamentally alters the blowing mechanism from resistive heating to phase transition. This material parameter change enables the fuse to operate at much lower currents (microamps range) while maintaining manufacturability through existing semiconductor fabrication processes
Solution Approach 2:
The patent exploits the phase transition property of chalcogenide materials, which can reversibly switch between crystalline and amorphous states. The fuse element blows by inducing a phase transition from crystalline to amorphous state through localized heating, enabling low-power operation compared to conventional fuse materials that rely solely on resistive heating and melting
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves lower power consumption and reduced chip area usage by minimizing the current required to blow the fuse element, with the phase change occurring in nanoseconds compared to milliseconds in conventional devices.
Implementation Method 1
the phase change material may undergo a phase change, so as to convert the fuse device into a blow-out state
Implementation Method 2
a dimension of the first electrode, at a portion where the first electrode contacts the fuse element, may include a sublithographic dimension
Data Source
AI summary
The present disclosure relates to an electrode manufacturing method, and a fuse device and manufacturing method therefor. The fuse device includes a fuse element including a phase change material, and a first electrode formed in contact with the fuse element. The phase change material may include doped or undoped chalcogenide. The first electrode may have a sublithographic dimension at a portion where the first electrode contacts the fuse element. When the phase change material has a layer thickness less than or equal to about 30 nm, and a pulse current less than or equal to about 3 mA is applied to the fuse element via the first electrode, the fuse element may undergo a phase change, so as to convert the fuse device into a blow-out state.