Phase Change Memory Element with Nitride Confinement
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Solution Overview
Problem
Conventional phase change memory elements require high operating currents, leading to high power consumption and reliability issues due to unconfined programmable regions of phase change material that can extend sideways, causing inadvertent phase changes and failure.
Innovation Solution
A phase change memory element design where a phase change material layer is formed to surround a nitride element, reducing the contact area and volume with electrodes, thereby decreasing the current required for phase changes and enhancing switching reliability by confining the programmable region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the contact area between phase change material and electrode is reduced to increase current density, then power consumption decreases, but manufacturing precision requirements increase due to the need for precise self-alignment
Solution Approach 1:
The phase change material layer serves dual functions: as the active memory material and as a self-aligned mask during electrode formation. The material's own structural properties enable precise alignment without requiring additional alignment processes, making the system self-sufficient in achieving the required precision
Solution Approach 2:
The phase change material layer is deposited and patterned before electrode formation, establishing precise alignment boundaries in advance. This preliminary structuring ensures that subsequent electrode deposition automatically achieves the required precision without additional alignment steps
2Ease of manufacture
If conventional phase change memory elements are used with larger contact areas, then manufacturing is easier, but power consumption increases and switching reliability decreases
Solution Approach 1:
The invention changes the contact area parameter to a smaller value, which simultaneously improves switching reliability through higher current density while maintaining ease of manufacture through the self-aligned formation process that eliminates complex alignment procedures
3Ease of manufacture
If the phase change material region is allowed to extend sideways, then manufacturing is simpler, but switching stability decreases due to unconfined programmable regions
Solution Approach 1:
The phase change material layer is formed as a thin film with laterally confined dimensions, creating a well-defined active region. This thin film structure prevents sideways extension while maintaining manufacturing simplicity through conformal deposition processes
Solution Approach 2:
The phase change material layer is selectively present only in the region directly overlying the electrode, creating local confinement of the programmable region. This localized structure ensures switching stability by preventing lateral phase changes while maintaining ease of manufacture through selective deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces power consumption by approximately one-fourth and improves switching stability and consistency by minimizing heat loss and preventing sideways extension of phase change material, thus enhancing overall reliability.
Implementation Method 1
Phase change materials have been investigated for use in non-volatile memory cells. Phase change memory elements include phase change materials, such as chalcogenide alloys, which are capable of stably transitioning between amorphous and crystalline phases.
Implementation Method 2
The current is removed and the phase change material cools rapidly to a temperature below the crystallization temperature, which results in the portion of the phase change material covering the first electrode having the amorphous phase.
Implementation Method 3
a lower current write pulse (a set pulse) is applied to the conventional phase change memory element for a second period of time (typically longer in duration than the first period of time and crystallization time of amorphous phase change material) to heat the amorphous portion of the phase change material to a temperature below its melting point, but above its crystallization temperature.
Implementation Method 4
A phase change material layer is formed to surround a nitride element, reducing the contact area and volume with electrodes, thereby decreasing the current required for phase changes and enhancing switching reliability by confining the programmable region.
Data Source
AI summary
A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.