Phase Shift Mask Data Merging for Resist Writing Efficiency

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The increasing pattern data amounts in phase shift mask manufacturing lead to longer data processing and writing times, and result in defects due to limitations in layout design and irregular layouts, particularly in auxiliary pattern type phase shift masks.

Innovation Solution

A method that combines pattern data for adjacent recesses into a single data set, reducing the overall pattern data amount and preventing defects by using a resist film writing process that includes data processing techniques like plus sizing and minus sizing to merge adjacent auxiliary opening portions into one pattern data.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If pattern data for each auxiliary opening portion is written separately, then the resist pattern can be formed accurately, but the writing data amount increases and writing time becomes longer

Engineering Contradiction:
Improveresist pattern formation accuracyVSAvoidwriting time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

Adjacent auxiliary opening portions are merged into a single pattern data set, reducing the total number of writing operations. The merged pattern data represents multiple adjacent openings as one continuous region, thereby decreasing writing data amount and writing time while still enabling accurate formation of individual openings through subsequent etching processes.

Inventive Principle:
Principle #5Merging (Combining)

2Area of stationary object

If auxiliary opening portions are arranged closely to reduce layout space, then the mask size is reduced, but thin portions in the resist pattern may fall during development

Engineering Contradiction:
Improvemask sizeVSAvoidresist pattern stability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

Adjacent auxiliary opening portions are merged into a single pattern data set, which eliminates extremely thin portions between closely spaced openings. This merging approach prevents the formation of unstable thin resist structures that could fall during development, while still achieving compact mask layout through efficient spatial arrangement of the merged patterns.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If the number of auxiliary opening portions is increased to improve phase shift effect, then the optical performance is enhanced, but the pattern data amount and processing complexity increase

Engineering Contradiction:
Improvephase shift effectVSAvoidpattern data complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Multiple auxiliary opening portions that contribute to the phase shift effect are merged into combined pattern data sets. This reduces the complexity of pattern data management and processing while preserving the optical functionality. The merged patterns maintain the necessary phase shift characteristics through their spatial arrangement and dimensional properties.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The merged pattern data structure serves multiple functions simultaneously: it represents multiple auxiliary openings, defines their collective spatial arrangement, and controls their combined optical effect. This universal data structure simplifies the overall pattern formation process while achieving the desired phase shift performance.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS7674563B2Pattern forming method and phase shift mask manufacturing method
Publication Date: 2010.03.09 HOYA CORPORATION
  • US7674563B2 patent drawing
  • US7674563B2 patent drawing
  • US7674563B2 patent drawing

AI summary

A phase shift mask manufacturing method comprises the steps of processing a light-shielding layer over a transparent substrate into a predetermined light-shielding pattern, forming a resist film on the predetermined light-shielding pattern, performing writing on the resist film based on writing data and developing the resist film, thereby forming a resist pattern, and etching an underlying layer using the predetermined light-shielding pattern and the resist pattern as a mask, thereby forming recesses, that serve as phase shift portions, in the underlying layer. The writing data includes a portion where pattern data corresponding to at least the two recesses adjacent to each other through a light-shielding portion in the predetermined light-shielding pattern are combined into one pattern data.