Phase Shift Mask for Amorphous Silicon Crystallization

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Solution Overview

Problem

Existing methods for manufacturing display apparatuses face challenges in efficiently crystallizing amorphous silicon layers into high-quality crystalline silicon layers, often requiring insufficient laser beam intensities and prolonged processing times.

Innovation Solution

A phase shift mask with a base substrate, barrier layer, and phase shift portions is used to emit a laser beam that effectively crystallizes amorphous silicon by alternating transmissive and phase-shifted regions, optimizing laser beam intensity and interference to enhance crystallization efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional laser beam irradiation is used to crystallize amorphous silicon, then crystallization can be achieved, but the process requires prolonged processing time and insufficient laser beam intensity

Engineering Contradiction:
Improvecrystallization speedVSAvoidlaser beam intensity
Core Design Contradiction:
ProductivityVSIllumination intensity

Solution Approach 1:

The mask is divided into multiple regions with different optical properties: transmissive regions that allow laser beam passage, phase shift regions that modify beam phase, and reflective regions. This segmentation enables different areas to contribute differently to the overall laser beam intensity at the crystallization target, thereby achieving higher effective intensity without increasing the source laser power.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The mask structure acts as an intermediary optical element between the laser beam source and the amorphous silicon layer. By incorporating phase shift regions and reflective regions, the mask modifies the laser beam characteristics (phase and intensity distribution) to achieve concentrated high-intensity irradiation on the target area, solving the insufficient beam intensity problem without requiring higher source power.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Loss of time

If higher laser beam intensity is applied to accelerate crystallization, then processing time can be reduced, but the mask structure becomes more complex

Engineering Contradiction:
Improveprocessing timeVSAvoidmask structure complexity
Core Design Contradiction:
Loss of timeVSDevice complexity

Solution Approach 1:

The mask is divided into multiple regions with different optical properties: transmissive regions that allow laser beam passage, phase shift regions that modify beam phase, and reflective regions. This segmentation enables different areas to contribute differently to the overall laser beam intensity at the crystallization target, thereby achieving higher effective intensity without increasing the source laser power.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The mask employs a composite structure combining materials with different optical characteristics in distinct regions. The transmissive regions use materials that allow laser passage, phase shift regions use materials that modify beam phase, and reflective regions use materials that reflect the beam. This composite approach enables sophisticated light control within a single integrated mask component, achieving complex optical functions without assembling multiple separate parts.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly increases laser beam intensity in targeted areas, dramatically reducing the time required to achieve high-quality crystalline silicon layers, facilitating faster and more efficient manufacturing of display apparatuses.

Implementation Method 1

The phase shift portions may include a material having a phase-inversion property

Methodology Applied
Scientific EffectPhase inversion: Phase Change

Implementation Method 2

phase shift portions which alternately fill the plurality of transmissive portions in the first direction

Methodology Applied
Scientific EffectLight interference: Interference

Data Source

PatentUS9417516B2Phase shift mask and method of manufacturing display apparatus using the same
Publication Date: 2016.08.16 SAMSUNG DISPLAY CO LTD
  • US9417516B2 patent drawing
  • US9417516B2 patent drawing
  • US9417516B2 patent drawing

AI summary

Provided is a method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate; changing amorphous silicon in the amorphous silicon layer into crystalline silicon by irradiating the amorphous silicon with a laser beam emitted through a phase shift mask; and forming a display device, the phase shift mask including a base substrate; a barrier layer on the base substrate and including a plurality of transmissive portions which are spaced apart from each other in a first direction; and phase shift portions which alternately fill the plurality of transmissive portions in the first direction.