Electro-Optic Phase Shifter Sandwich Structure for Lower Power
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Solution Overview
Problem
Existing electro-optic modulators and switches face challenges in fabrication and architecture, necessitating improved methods and systems for reducing power consumption and enhancing operational efficiency.
Innovation Solution
The use of high dielectric constant materials in optical modulators and switches, particularly in photonic devices such as phase shifters and switches, to reduce power consumption by employing electro-optic effects like free carrier induced refractive index variation, Pockels effect, and DC Kerr effect, with electrodes composed of materials like gallium arsenide and strontium titanate to control optical properties efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional electro-optic modulators utilize free-carrier electro-refraction or electro-absorption, then optical properties can be modified, but power consumption increases
Solution Approach 1:
The patent changes the material parameter of electrodes from conventional silicon to high-mobility materials (GaAs, InGaAs, InAlAs) with electron mobility exceeding 6700 cm²/Vs. This parameter change enables more efficient carrier injection and removal, reducing the power required for electro-optic modulation while maintaining reliable operation through enhanced carrier dynamics
Solution Approach 2:
The patent employs composite material structures combining high-mobility semiconductor materials (GaAs, InGaAs, InAlAs) with electro-optic materials (LiNbO3, BaTiO3, P(VDF-TrFE)). This composite approach leverages the high carrier mobility of the semiconductor electrodes to reduce power consumption while the electro-optic materials provide the necessary optical modulation capability
2Ease of operation
If electrodes are composed of conventional materials like silicon, then fabrication is simplified, but control over optical properties becomes less efficient
Solution Approach 1:
The patent changes the material parameter of electrodes from conventional silicon to high-mobility materials (GaAs, InGaAs, InAlAs) with electron mobility exceeding 6700 cm²/Vs. This parameter change enables more efficient carrier injection and removal, reducing the power required for electro-optic modulation while maintaining reliable operation through enhanced carrier dynamics
Solution Approach 2:
The high-mobility semiconductor materials serve multiple functions: they act as electrodes for electrical contact, provide efficient carrier injection and removal mechanisms, and enable low-power operation. This multi-functionality enhances control efficiency without proportionally increasing fabrication complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption and enhances control over optical signals, enabling energy-efficient operation and improved performance in optical systems, including quantum computing systems.
Implementation Method 1
Some EO modulators utilize free-carrier electro-refraction, free-carrier electro-absorption, the Pockel's effect, or the DC Kerr effect to modify optical properties during operation, for example, to change the phase of light propagating through the EO modulator or switch
Implementation Method 2
Some EO modulators utilize free-carrier electro-refraction, free-carrier electro-absorption, the Pockel's effect, or the DC Kerr effect to modify optical properties during operation
Implementation Method 3
Some EO modulators utilize free-carrier electro-refraction, free-carrier electro-absorption, the Pockel's effect, or the DC Kerr effect to modify optical properties during operation
Implementation Method 4
The use of high dielectric constant materials in optical modulators and switches, particularly in photonic devices such as phase shifters and switches, to reduce power consumption by employing electro-optic effects
Data Source
AI summary
Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.


