Phase Shifter Transparent Electrodes High Mobility

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Solution Overview

Problem

There is a need for improved methods and systems related to the fabrication and architectures of electro-optic (EO) modulators and switches, which have not been adequately addressed by existing technologies.

Innovation Solution

The development of photonic devices that include a waveguide structure coupled to high-κ electrodes, where the electrodes are composed of materials with higher electron mobility than silicon, and the use of a specific fabrication method involving seed layers, electro-optic layers, and cladding layers to create ridge waveguide structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional electrodes with lower electron mobility materials are used, then fabrication is simpler and cost is lower, but power consumption increases and control efficiency decreases

Engineering Contradiction:
Improvepower consumptionVSAvoidelectrode material complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent changes the electron mobility parameter of the electrode material from conventional low-mobility materials to high-mobility materials (such as gallium arsenide with electron mobility of 8500 cm²/Vs or higher than silicon's 1500 cm²/Vs). This parameter change enables more efficient electric field control within the waveguide structure, reducing power consumption while maintaining fabrication feasibility through established semiconductor manufacturing processes.

Inventive Principle:
Principle #35Parameter changes

2Ease of operation

If high-κ materials with higher electron mobility are used for electrodes, then control efficiency and power efficiency improve, but material selection and fabrication complexity increase

Engineering Contradiction:
Improvecontrol efficiencyVSAvoidfabrication ease
Core Design Contradiction:
Ease of operationVSEase of manufacture

Solution Approach 1:

The patent utilizes materials with specific electron mobility parameters (higher than silicon) such as gallium arsenide or other high-mobility semiconductors. These material parameter changes enable superior electric field control and reduced power consumption, while the fabrication process remains grounded in conventional semiconductor manufacturing techniques including epitaxial growth, lithography, and etching, thus balancing performance improvement with manufacturing feasibility.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces power consumption in optical modulators and switches by utilizing high-κ materials for the electrodes, allowing for more efficient control of the electric field within the waveguide structure, thereby enhancing the performance of EO devices.

Implementation Method 1

Electro-optic (EO) modulators and switches have been used in optical fields. Some EO modulators utilize free-carrier electro-refraction, free-carrier electro-absorption, the Pockel's effect, or the DC Kerr effect to modify optical properties during operation, for example, to change the phase of light propagating through the EO modulator or switch.

Methodology Applied
Scientific EffectElectro-optic effect: Electro-Optic Effects

Data Source

PatentUS20250147378A1Phase shifter employing transparent electrodes
Publication Date: 2025.05.08 PSIQUANTUM CORP
  • US20250147378A1 patent drawing
  • US20250147378A1 patent drawing
  • US20250147378A1 patent drawing

AI summary

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.