Phenolic Resist Underlayer Composition for EUV Pattern Sensitivity

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Solution Overview

Problem

Existing resist underlayer films face challenges in forming high-sensitivity resist patterns due to interactions with semiconductor substrates, particularly with advanced lithography techniques like EUV light and electron beams.

Innovation Solution

A resist underlayer film-forming composition containing a compound with an aromatic hydrocarbon ring bonded to a phenolic hydroxy group and a solvent, with an atomic percentage of oxygen in the phenolic hydroxy group of 2.00% or more, which forms a resist underlayer film capable of high-sensitivity pattern formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional resist underlayer film is formed on a semiconductor substrate, then the substrate surface is protected, but the resist pattern formation sensitivity deteriorates due to interactions between the underlayer film and the substrate

Engineering Contradiction:

Improvesubstrate protectionVSAvoidresist pattern formation sensitivity

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent introduces a specific underlayer film composition containing phenolic compounds with controlled oxygen content (2.00-30.00 atomic %) as an intermediary between the semiconductor substrate and the resist film. This intermediary layer is designed to minimize harmful interactions while maintaining substrate protection, thereby resolving the contradiction between reliability and manufacturing precision

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent optimizes the oxygen content parameter of the phenolic compound in the underlayer film to a specific range (2.00-30.00 atomic %) to achieve the desired balance between substrate protection and resist pattern sensitivity. By controlling this chemical parameter, the film's interaction characteristics with both the substrate and resist are optimized

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If the underlayer film composition is optimized for high sensitivity, then resist pattern formation improves, but intermixing with the resist film increases (insolubility requirement becomes harder to meet)

Engineering Contradiction:

Improveresist pattern formation sensitivityVSAvoidinsolubility in resist solvent

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The patent carefully controls the oxygen content parameter within a specific range (2.00-30.00 atomic %) to achieve the optimal balance between sensitivity and compositional stability. This parameter optimization ensures that the underlayer film maintains its insolubility in resist solvents while enabling high-sensitivity pattern formation

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses phenolic compounds as a composite material system with specific chemical characteristics. The phenolic structure provides both the sensitivity enhancement needed for high-quality resist patterns and the chemical stability required to prevent intermixing with the resist film

Inventive Principle:

Principle #40Composite materials

Data Source

PatentEP4692944A1Composition for forming resist underlayer film

Publication Date: 2026.02.11 NISSAN CHEM CORP

AI summary

A resist underlayer film-forming composition, containing a compound (A) containing an aromatic hydrocarbon ring to which a phenolic hydroxy group is bonded and a solvent (B), in which an atomic percentage of oxygen in the phenolic hydroxy group in a cured film of the composition is 2.00% or more.