Phosphonic Acid Surface Treatment for Area-Selective ALD
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Solution Overview
Problem
Current methods for area-selective surface modification using the atomic layer deposition (ALD) method are time-consuming and lack sufficient contrast between regions of different materials, hindering effective area-selective film formation at the atomic layer level.
Innovation Solution
A surface treatment agent comprising a compound represented by the general formula R1—P(═O)(OR2)(OR3) and an acid, which selectively modifies the substrate surface, improving reaction rates and contrast between regions, allowing for area-selective deposition by altering the contact angle and surface free energy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional surface modification methods are used to selectively modify the substrate surface, then area-selective film formation is achieved, but the process time is excessively long
Solution Approach 1:
The patent changes the chemical parameters of the surface treatment agent by using phosphonic acid compounds with specific molecular structures (containing P=O and P-OH groups) that exhibit high reactivity toward metal oxides. This parameter change enables the surface modification to be completed in 1-30 seconds, dramatically reducing the modification time while maintaining high area-selectivity for metal oxide regions.
Solution Approach 2:
The patent applies surface treatment agents that rapidly and selectively modify metal oxide regions before the ALD process begins. This preliminary action creates a distinct surface energy difference between metal oxide and non-metal oxide regions, enabling subsequent area-selective film deposition without requiring prolonged modification times.
2Reliability
If conventional surface treatment agents are used, then some area-selectivity is achieved, but the contrast between regions of different materials is insufficient
Solution Approach 1:
The patent uses phosphonic acid compounds with specific chemical parameters (P=O and P-OH groups) that create a pronounced difference in surface free energy between treated and untreated regions. This results in a contact angle difference of 30° or more between metal oxide and non-metal oxide regions, providing sufficient contrast for high-precision area-selective deposition.
Solution Approach 2:
The phosphonic acid compound acts as an intermediary that selectively adsorbs onto metal oxide surfaces through its P=O and P-OH groups, creating a distinct interface layer. This intermediary layer fundamentally changes the surface properties of metal oxide regions, creating a clear boundary with non-metal oxide regions and enhancing the contrast necessary for precise area-selective deposition.
3Productivity
If the surface modification process is accelerated, then productivity is improved, but the selectivity between different material regions deteriorates
Solution Approach 1:
The patent achieves both high speed and high selectivity by changing the chemical reactivity parameters of the treatment agent. The phosphonic acid compounds have high affinity for metal oxide surfaces, enabling selective modification to occur extremely rapidly (1-30 seconds) without compromising area-selectivity, thus improving productivity while maintaining reliability.
Solution Approach 2:
The patent performs rapid preliminary surface modification using highly reactive phosphonic acid compounds that instantly differentiate between metal oxide and non-metal oxide regions. This fast preliminary action establishes the selective surface properties needed for area-selective deposition before the main ALD process begins, enabling high productivity without sacrificing selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The surface treatment agent enhances the selectivity of the ALD method by varying the deposition amount of the film material across different regions, enabling precise control of film thickness and step coverage, thereby improving the miniaturization and integration of semiconductor devices.
Implementation Method 1
a surface modifier capable of selectively modifying at least one area with a good reaction rate and improving the contrast between regions of different materials
Implementation Method 2
R1—P(═O)(OR2)(OR3) where the compound contains a P=O bond and a P-OH bond
Data Source
AI summary
A surface treatment agent including a compound represented by the following general formula (P-1) and an acid. In the formula, R1 represents a linear or branched alkyl group having 8 or more carbon atoms, a linear or branched fluorinated alkyl group having 8 or more carbon atoms, or an aromatic hydrocarbon group; R2 and R3 each independently represents a hydrogen atom, a linear or branched alkyl group having 8 or more carbon atoms, a linear or branched fluorinated alkyl group having 8 or more carbon atoms, or an aromatic hydrocarbon groupR1—P(═O)(OR2)(OR3) (P-1).