Phosphonic Acid Polymer for Semiconductor Surface Cleaning
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Solution Overview
Problem
Existing cleaning compositions for semiconductor substrates after chemical mechanical polishing (CMP) are inadequate in removing foreign matters, leading to contamination and reliability issues in semiconductor devices.
Innovation Solution
A composition comprising a polymer with structural units having a phosphonic acid group and a divalent oxyhydrocarbon group, exceeding 50% by mole, which effectively removes foreign matters through electrostatic and hydrophobic interactions, enhancing the cleaning efficacy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning compositions containing polycarboxylic acid or hydroxycarboxylic acid are used, then the cleaning composition can prevent substrate corrosion, but foreign matters cannot be sufficiently removed from the polished surface
Solution Approach 1:
The invention changes the chemical composition parameters by introducing phosphonic acid groups and divalent oxyhydrocarbon groups into the polymer structure. This structural modification enables the cleaning composition to achieve both sufficient foreign matter removal and substrate corrosion prevention simultaneously, resolving the contradiction between cleaning efficiency and substrate protection
Solution Approach 2:
The invention uses a composite polymer structure combining phosphonic acid groups with divalent oxyhydrocarbon groups. This composite material approach creates a cleaning composition that possesses dual functionality: the phosphonic acid groups provide strong chelating ability for foreign matter removal, while the oxyhydrocarbon groups contribute to substrate protection, thus resolving the technical contradiction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly improves the removal of foreign matters, including organic residues, from semiconductor substrates, ensuring better device reliability and performance by effectively adsorbing and dispersing contaminants.
Implementation Method 1
the effect of removing foreign matters is remarkably improved by using a polymer compound that contains structural units each with a specific structure having a phosphonic acid (salt) group
Implementation Method 2
a (co)polymer containing a structural unit A having a phosphonic acid group and a divalent (poly)oxyhydrocarbon group
Data Source
AI summary
The present invention is to provide a means with which foreign matters remaining on a surface of a polished object to be polished can be sufficiently removed. The present invention relates to a composition for surface treatment for a polished object to be polished, including: a (co)polymer containing a structural unit A having a phosphonic acid group and a divalent (poly)oxyhydrocarbon group or a salt thereof; and water, wherein a content of the structural units A exceeds 50% by mole relative to the total structural units forming the (co)polymer.