Plasma Etching Chamber Phosphorus Surfaces for HF Adsorption Control
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Solution Overview
Problem
Existing plasma etching technologies for silicon-containing films face challenges in achieving efficient and controlled etching rates, particularly with silicon oxide films, due to limitations in etchant adsorption and distribution.
Innovation Solution
Incorporating phosphorus into the plasma processing chamber or its internal members, or applying a phosphorus-containing film, to enhance etchant adsorption and control the etching rate by promoting the adsorption of hydrogen fluoride etchants on the silicon-containing film surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional plasma etching processes are used with fluorocarbon or hydrocarbon gases, then etching of silicon-containing films can be performed, but the etching rate control and etchant adsorption efficiency are insufficient
Solution Approach 1:
The invention changes the chemical composition parameter of the process gas by introducing hydrogen fluoride gas (HF) into the plasma etching process. This parameter change enables significantly improved etching rate control and etchant adsorption efficiency on silicon-containing films, resolving the contradiction between productivity and manufacturing precision in etching processes.
Solution Approach 2:
The invention creates a composite plasma environment by combining hydrogen fluoride gas with traditional fluorocarbon or hydrocarbon process gases. This composite approach allows the HF component to enhance etchant adsorption and etching rate control while the other gas components maintain plasma generation and basic etching functionality, achieving both high productivity and precise control.
2Reliability
If etching processes are performed without hydrogen fluoride gas, then conventional plasma generation is maintained, but etchant adsorption on the silicon-containing film surface is insufficient
Solution Approach 1:
The invention modifies the process gas composition parameter by adding hydrogen fluoride gas to the plasma etching process. This single parameter change dramatically improves etchant adsorption reliability on silicon-containing film surfaces without requiring complex changes to the overall device structure or process system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of phosphorus improves the etching rate control by optimizing etchant adsorption, leading to more precise and efficient plasma etching processes for silicon-containing films.
Implementation Method 1
a plasma generator configured to generate a plasma from the process gas
Implementation Method 2
enhance etchant adsorption and control the etching rate by promoting the adsorption of hydrogen fluoride etchants on the silicon-containing film surface
Data Source
AI summary
A plasma processing apparatus includes: a chamber; a substrate support disposed in the chamber and for supporting a substrate, the substrate support including a silicon-containing film; a gas supply for supplying a process gas including a hydrogen fluoride gas into the chamber; and a plasma generator for generating a plasma from the process gas, in which at least one of the chamber or an internal member disposed in the chamber contains phosphorus.