Photo-mask OPC via Layout Segmentation by Pattern Density
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Solution Overview
Problem
The challenge in manufacturing photo-masks for semiconductor devices lies in achieving precise micro-pattern formation, as the size of patterns transferred onto wafers becomes smaller than the wavelength of exposure beams, requiring effective optical proximity correction (OPC) to correct diffraction and interference issues.
Innovation Solution
A method involving the division of design layouts into two-dimensionally repeated, one-dimensionally repeated, and non-repeated portions, followed by specific optical proximity correction (OPC) techniques tailored to each portion, using either symmetric or asymmetric size adjustments and position changes to form corrected layouts, which are then used to create a photo-mask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction (OPC) is performed on the entire design layout uniformly, then the micro-pattern formation precision is improved, but the manufacturing complexity and processing time increase significantly
Solution Approach 1:
The design layout is divided into multiple regions based on pattern density characteristics: first regions (high density), second regions (medium density), and third regions (low density). Each region undergoes OPC processing with parameters optimized for its specific characteristics, avoiding uniform complex processing across the entire layout and thereby reducing overall processing complexity while maintaining precision.
Solution Approach 2:
Different OPC processing parameters and correction amounts are applied to different regions according to their specific density characteristics. The first region receives correction parameters optimized for high density patterns, the second region for medium density, and the third region for low density. This localized approach ensures optimal correction precision for each region without applying unnecessary complex processing uniformly.
2Manufacturing precision
If optical proximity correction (OPC) is performed with high correction amounts to compensate for diffraction and interference, then the micro-pattern precision is improved, but the position deviations between patterns increase
Solution Approach 1:
The invention dynamically adjusts OPC correction parameters based on pattern density: smaller correction amounts are applied in high-density first regions to minimize position shifts, while larger correction amounts are applied in low-density third regions where diffraction effects are more pronounced. This parameter adaptation resolves the contradiction by optimizing the balance between correction effectiveness and position accuracy for each region.
3Ease of manufacture
If the photo-mask is manufactured without dividing the design layout into regions, then the manufacturing process is simpler, but the correction precision for different density areas deteriorates
Solution Approach 1:
The design layout is automatically segmented into first, second, and third regions based on pattern density metrics. This segmentation enables region-specific OPC processing that achieves high correction precision for each density level while maintaining overall process manageability through systematic classification and automated parameter selection.
Solution Approach 2:
The invention establishes a universal OPC processing framework that handles multiple region types (first, second, and third regions) with different characteristics using a unified methodology. The same basic OPC algorithm is applied across all regions, but with automatically adjusted parameters suited to each region's density characteristics, achieving both precision and ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and reliable micro-pattern formation by accurately correcting size and position deviations, enhancing the quality of semiconductor device manufacturing through optimized OPC methods.
Implementation Method 1
optical proximity correction (OPC) for correcting diffraction and interference of light
Implementation Method 2
optical proximity correction (OPC) for correcting diffraction and interference of light
Data Source
AI summary
Provided is a method of manufacturing a photo-mask having a micro pattern. The method includes providing an analyzing design layout, dividing the analyzing design layout into a two-dimensionally repeated portion, a one-dimensionally repeated portion, and a non-repeated portion, forming a first corrected layout by performing optical proximity correction (OPC) in the two-dimensionally repeated portion, forming a second corrected layout, taking account of the first corrected layout, by performing OPC in the one-dimensionally repeated portion, forming a third corrected layout, taking account of the first corrected layout and the second corrected layout, by performing OPC in the non-repeated portion, and forming a photo-mask based on the first through third corrected layouts.