Photo Relay Vertical Layout for High-Frequency Signal Isolation

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Solution Overview

Problem

Existing photo relay devices face challenges in improving high-frequency signal transmission characteristics due to coupling capacitances and open stub effects, which deteriorate performance at both high and low frequencies, and require larger installation areas.

Innovation Solution

The photo relay device configuration includes a substrate with MOSFETs, a support base, a light receiving element, and a light emitting element disposed in a longitudinal direction, reducing coupling capacitances and wire lengths, thereby improving high-frequency transmission characteristics and allowing for a more compact design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the light receiving element and light emitting element are disposed in a conventional layout, then the device structure is simple, but coupling capacitances and open stub effects deteriorate high-frequency signal transmission characteristics

Engineering Contradiction:
Improvehigh-frequency signal transmission characteristicsVSAvoiddevice structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies dimensionality change by transitioning from a planar layout to a three-dimensional stacked configuration. The light receiving element and light emitting element are disposed at different vertical levels on the substrate, with the light receiving element positioned at a first location and the light emitting element at a second location in the vertical direction. This spatial separation in the vertical dimension reduces coupling capacitances between signal lines while maintaining a compact footprint, thereby improving high-frequency signal transmission characteristics without significantly increasing device complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If wire lengths are reduced to improve high-frequency transmission, then signal quality improves, but the device requires more compact arrangement which increases design complexity

Engineering Contradiction:
Improvehigh-frequency transmission characteristicsVSAvoidwire arrangement
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent utilizes vertical stacking to reduce horizontal wire lengths. By positioning the light receiving element and light emitting element at different vertical levels, the signal paths become shorter and more direct, reducing the impact of open stub effects and improving high-frequency transmission characteristics. The vertical arrangement allows for more efficient wire routing with fewer vias and interconnects compared to planar layouts.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If coupling capacitances are minimized for better signal transmission, then high-frequency performance improves, but the device layout becomes more constrained

Engineering Contradiction:
Improvesignal transmission characteristicsVSAvoidlayout flexibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent achieves minimal coupling capacitances by separating signal lines in the vertical dimension rather than relying solely on horizontal spacing. The light receiving element and light emitting element are positioned at different vertical levels, allowing signal lines to be routed at different heights with reduced parasitic coupling. This vertical separation maintains layout flexibility while effectively minimizing coupling capacitances for improved signal transmission.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances high-frequency signal transmission beyond 1 GHz by minimizing coupling capacitances and open stub effects, while also reducing the device's size and electromagnetic interference.

Implementation Method 1

a light emitting element that is in contact with a third surface of the light receiving element facing the first direction

Methodology Applied
Scientific EffectLight emission: Light Emitting Diode

Implementation Method 2

a light receiving element that is in contact with a second surface of the support base facing the first direction

Methodology Applied
Scientific EffectLight reception: Photoelectric Effect

Data Source

PatentUS11990460B2Semiconductor device
Publication Date: 2024.05.21 KK TOSHIBA
  • US11990460B2 patent drawing
  • US11990460B2 patent drawing
  • US11990460B2 patent drawing

AI summary

According to one embodiment, a semiconductor device includes: a substrate that has a first surface extending in a first direction and a second direction; a first metal oxide semiconductor field effect transistor (MOSFET) that is provided on the first surface of the substrate; a support base that is provided above the first surface of the substrate and extends in a third direction intersecting the first direction and the second direction; a light receiving element that is in contact with a second surface of the support base facing the first direction; and a light emitting element that is in contact with a third surface of the light receiving element facing the first direction.