Photo-Responsive Floating-Body Transistor for Neuromorphic Vision
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Solution Overview
Problem
Current neuromorphic computing systems for artificial visual perception face challenges with high hardware costs and signal delays due to the need for image sensors, optical signal converting circuits, and artificial neural networks, which also result in increased power consumption.
Innovation Solution
A photo-responsive neuronal device is implemented using a transistor with a semiconductor substrate, a floating body, source and drain regions, and a gate insulating film, capable of detecting light and generating spike signals, thereby eliminating the need for additional components like image sensors and optical signal converting circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a system combining image sensor, optical signal converting circuit, and artificial neural network is used, then optical signal detection and processing can be achieved, but hardware cost increases and signal delay occurs
Solution Approach 1:
The patent combines the photodetection function and neural spike generation function into a single transistor device. The floating body transistor inherently generates spike signals in response to incident light, eliminating the need for separate image sensors and optical signal converting circuits while maintaining optical signal detection capability
Solution Approach 2:
The floating body transistor performs multiple functions simultaneously: it acts as both a photodetector for optical signal detection and a neural neuron for spike signal generation. This multi-functional device replaces the traditional multi-component system, reducing hardware complexity and cost
2Reliability
If a system combining image sensor, optical signal converting circuit, and artificial neural network is used, then optical signal processing can be achieved, but signal delay increases
Solution Approach 1:
The patent merges the optical-to-electrical conversion process and neural signal processing into a single integrated transistor device. Incident light directly generates spike signals through the floating body effect, eliminating the time-consuming intermediate conversion steps and reducing overall signal delay
3Reliability
If a system combining image sensor, optical signal converting circuit, and artificial neural network is used, then optical signal detection can be achieved, but power consumption increases
Solution Approach 1:
The floating body transistor generates spike signals autonomously in response to incident light without requiring external conversion circuits or additional power-consuming processing stages. The device self-converts optical energy to electrical spike signals through its inherent floating body effect, minimizing power consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables low-cost, high-integration artificial visual perception systems with reduced signal delays and power consumption by integrating light detection and signal processing within a single device, mimicking biological visual perception systems.
Implementation Method 1
the floating body may be configured to accumulate all of hole generated by impact ionization and hole generated by photon incident on the floating body
Implementation Method 2
the source region and the drain region may be configured to output voltage signals in a spike form through integration phenomenon and firing phenomenon
Implementation Method 3
increase spiking frequency by lowering firing threshold voltage in response to photon incident
Data Source
AI summary
A transistor for implementing a photo-responsive neuronal device is disclosed. According to one example embodiment, the transistor includes a semiconductor substrate including a hole barrier region or an electron barrier region; a floating body extended in a horizontal direction on the hole barrier region or the electron barrier region; a source region and a drain region formed at both ends of the floating body; a gate insulating film formed on the floating body; and a gate region formed on the gate insulating film.