Photo Sensor Relief Structure for OLED Light Absorption

The patent introduces a relief structure that adds vertical dimensionality to the photo sensor surface. By creating convex or concave patterns in the gate insulating layer, the effective light receiving area is increased without expanding the planar footprint. This dimensional transformation allows more light to be captured while maintaining a compact device structure.

The patent modifies the physical parameters of the photo sensor by changing the surface topology of the gate insulating layer. The relief structure changes the surface area parameter and light path geometry, enabling enhanced light absorption. The convex or concave patterns create multiple light reflection paths, increasing the effective optical path length and absorption probability.

The patent combines the relief structure formation with the existing gate insulating layer deposition process. The relief pattern is integrated into the gate insulating layer that is already part of the thin film transistor structure, rather than adding a separate component. This merging approach allows the light-receiving enhancement to be achieved using existing manufacturing steps and materials.

The relief structure is applied locally only to the gate insulating layer region above the photo sensor, rather than modifying the entire device structure. This localized approach concentrates the light-receiving enhancement where it is most needed while minimizing the impact on overall manufacturing complexity. The patterned relief structure is formed only in specific areas to optimize light absorption.