Photoacid Resin Composition for High-Resolution Pattern Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing actinic ray-sensitive or radiation-sensitive resin compositions face challenges in achieving high resolving power and reducing development defects, especially over time, in ultrafine pattern formation processes for semiconductor devices.
Innovation Solution
A resin composition comprising a compound that generates an acid upon irradiation, another compound generating an acid with a higher pKa, and a basic compound, with specific molar ratios and content percentages, to enhance resolving power and reduce development defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional actinic ray-sensitive resin compositions are used, then basic lithography functionality is achieved, but resolving power is insufficient and development defects occur over time
Solution Approach 1:
The patent employs a composite resist composition containing multiple resins (novel polymer (1) with specific glass transition temperature range of 80°C to 120°C, polymer (2), and polymer (3)) combined with specific photoacid generators. This composite approach allows the composition to achieve high resolving power through optimized molecular weight distribution and glass transition temperature, while maintaining pattern quality over time through the synergistic effects of multiple polymers with complementary properties.
Solution Approach 2:
The patent optimizes critical parameters including the glass transition temperature of the novel polymer (1) within 80°C to 120°C, molecular weight ratios between polymers, and photoacid generator content. By precisely controlling these parameters, the composition achieves enhanced resolving power while the specific glass transition temperature range ensures stability and reduced development defects over time.
2Length of moving object
If pattern size is miniaturized for ultrafine patterns, then higher integration is achieved, but development defects increase
Solution Approach 1:
The patent achieves ultrafine pattern formation by controlling the glass transition temperature of polymer (1) within 80°C to 120°C and optimizing molecular weight ratios. This parameter optimization enables the resist to maintain adequate solubility and flow characteristics even at miniaturized dimensions, preventing development defects while achieving the required small feature sizes for high integration.
Solution Approach 2:
The composite resist composition combines novel polymer (1) with specific glass transition temperature, polymer (2), and polymer (3) in optimized ratios. This composite structure provides the necessary mechanical properties and solubility characteristics to prevent development defects during ultrafine pattern formation, while the synergistic interaction between components maintains pattern fidelity at miniaturized scales.
3Manufacturing precision
If exposure wavelength is shortened for higher resolving power, then pattern resolution improves, but process complexity increases
Solution Approach 1:
The patent formulates the resist composition to be compatible with ArF excimer laser exposure at 193 nm by optimizing the glass transition temperature of polymer (1) to 80°C to 120°C and adjusting molecular weight ratios. This parameter optimization allows the use of shorter wavelength exposure to achieve higher resolution while maintaining processability and reducing overall process complexity through simplified resist preparation and development procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved resolving power and fewer development defects in pattern forming methods, maintaining performance over time, suitable for ultra-microlithography and photomask manufacturing.
Implementation Method 1
a compound (A) that has a group (a) having a polarity which changes through decomposition by an action of an acid, and generates an acid (ac1) upon irradiation with actinic rays or radiation
Implementation Method 2
a compound (B) that generates an acid (ac2) having a higher pKa than the acid (ac1) generated from the compound (A), upon irradiation with actinic rays or radiation
Data Source
AI summary
An actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (P) of which a solubility in a developer changes by an action of an acid; a compound (A) that has a group (a) having a polarity which changes through decomposition by an action of an acid, and generates an acid (ac1) upon irradiation with actinic rays or radiation; a compound (B) that generates an acid (ac2) having a higher pKa than the acid (ac1) generated from the compound (A), upon irradiation with actinic rays or radiation; and a basic compound (C).