Photocurable Composition for Nanoimprint Patterning
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Solution Overview
Problem
The photo-nanoimprint technique faces challenges in forming precise uneven patterns with high productivity due to high demolding forces, which result in defects, and requires distinct characteristics for the photocured film in reverse processes, differing from typical imprint resists.
Innovation Solution
A patterning method using a photocurable composition with a polymerizable compound and photopolymerization initiator, where the compound has a mole fraction weighted average molecular weight of 200 or more and 1000 or less, and an Ohnishi parameter of 3.80 or more, to reduce demolding force and enhance dry etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a photocured film is formed with high dry etch resistance for use as an etching mask, then etching resistance is improved, but demolding force increases causing defects
Solution Approach 1:
The invention changes the chemical composition parameters of the photocurable composition by specifying a polymerizable compound with a particular Ohnishi parameter (OP) of 3.80 or more and molecular weight of 200-1000. This parameter change enables the cured film to achieve both high dry etch resistance and low demolding force, resolving the contradiction between these two properties.
2Manufacturing precision
If a mold with high uneven pattern (40 nm or more) is used to form precise structures, then pattern precision is improved, but demolding force increases resulting in more defects
Solution Approach 1:
The invention applies parameter changes to the photocurable composition (Ohnishi parameter ≥3.80, molecular weight 200-1000) to enable successful demolding from high-resolution molds with 40 nm or greater pattern height. The modified composition reduces demolding force while maintaining pattern precision, thereby improving reliability and reducing defects.
3Ease of manufacture
If typical imprint resist is used for photo-nanoimprint technique, then ease of manufacture is maintained, but productivity decreases due to high demolding force and defects
Solution Approach 1:
The invention modifies the resist composition parameters (polymerizable compound with OP≥3.80 and molecular weight 200-1000) to simultaneously achieve ease of manufacture and high productivity. The new composition reduces demolding force and defect rates, enabling efficient production without complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of precise uneven patterns with reduced defects and improved dry etching rates, suitable for both photo-nanoimprint and reverse processes, enhancing the productivity and accuracy of pattern formation.
Implementation Method 1
the photocurable composition contains at least a polymerizable compound (A) component and a photopolymerization initiator (B) component
Data Source
AI summary
To provide a patterning method for forming a desired pattern in a reverse process.A patterning method includes a reverse process.A photocurable composition contains at least a polymerizable compound (A) component and a photopolymerization initiator (B) component.The (A) component has a mole fraction weighted average molecular weight of 200 or more and 1000 or less.The (A) component has an Ohnishi parameter (OP) of 3.80 or more.The Ohnishi parameter (OP) of the (A) component is a mole fraction weighted average of N/(NC−NO), wherein N denotes a total number of atoms in a molecule, NC denotes a number of carbon atoms in the molecule, and NO denotes a number of oxygen atoms in the molecule.