Photocurable Silicon Coating for Planar Underlayers
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Solution Overview
Problem
The challenge is to achieve planarization of an organic underlayer film on an uneven substrate without deteriorating its planarity, particularly in semiconductor device production, where thermal curing of silicon-containing resist underlayer films can cause shrinkage and irregularities.
Innovation Solution
A photocurable silicon-containing coating film-forming composition is developed, comprising hydrolyzable silanes that can be photocured without high-temperature baking, using specific organic groups and exposure to ultraviolet light to form a crosslinked structure, thereby maintaining the planarity of the organic underlayer film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal curing is used to cure the silicon-containing resist underlayer film, then the film is cured and hardened, but the organic underlayer film shrinks and loses planarity
Solution Approach 1:
The patent changes the curing method from thermal to photocuring by introducing a photoacid generator and using UV light exposure. This parameter change allows the silicon-containing resist underlayer film to be cured without applying heat, thereby preventing thermal shrinkage of the organic underlayer film and maintaining its planarity
Solution Approach 2:
The patent replaces the thermal curing mechanism with a photocuring mechanism. Instead of using heat energy to induce crosslinking, the invention uses light energy (UV exposure) to activate the photoacid generator, which then catalyzes the crosslinking reaction of the silicon-containing compound, eliminating the harmful thermal effects
2Reliability
If high-temperature baking is applied to cure the silicon-containing composition, then curing is achieved, but irregularities and shrinkage occur on the organic underlayer film surface
Solution Approach 1:
The patent changes the energy input parameter from thermal energy (high-temperature baking) to optical energy (UV light exposure). This parameter change enables curing of the silicon-containing composition without causing surface irregularities, as photocuring occurs without the thermal shrinkage and deformation that affects the organic underlayer film
3Reliability
If thermal curing is used, then the silicon-containing film is cured, but diffused reflection occurs due to surface irregularities
Solution Approach 1:
The patent replaces thermal curing with photocuring to eliminate the generation of surface irregularities. By using UV light to activate the photoacid generator and initiate crosslinking, the process avoids thermal shrinkage and surface deformation, thereby preventing diffused reflection and maintaining a smooth interface between layers
Solution Approach 2:
The patent changes the curing parameter from temperature-dependent thermal process to light-dependent photocuring process. This parameter change ensures that the silicon-containing film is cured without creating surface irregularities, thus eliminating the harmful effect of diffused reflection while maintaining proper adhesion and planarity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents thermal shrinkage and maintains the planarity of the organic underlayer film, reducing diffused reflection and irregularities, enabling the formation of precise resist patterns and accurate semiconductor devices.
Implementation Method 1
a photoacid generator, and a silicon-containing compound having a crosslinkable functional group
Implementation Method 2
a silicon-containing compound having a crosslinkable functional group... the crosslinking reaction of the silicon-containing compound
Data Source
AI summary
A method for producing a coated substrate includes applying a photocurable silicon-containing coating film-forming composition to an uneven substrate; and exposing the photocurable silicon-containing coating film-forming composition to light, wherein the photocurable silicon-containing coating film-forming composition comprises a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane is a hydrolyzable silane of the following Formula (1):R1aR2bSi(R3)4−(a+b) Formula (1)wherein R1 is a functional group relating to photocrosslinking; R2 is an alkyl group and is bonded to a silicon atom via an Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3.


